X-On Electronics has gained recognition as a prominent supplier of TP65H050WSQA MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP65H050WSQA MOSFETs are a product manufactured by Transphorm. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP65H050WSQA Transphorm

TP65H050WSQA electronic component of Transphorm
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See Product Specifications
Part No.TP65H050WSQA
Manufacturer: Transphorm
Category: MOSFETs
Description: MOSFET GAN FET 650V 36A TO247
Datasheet: TP65H050WSQA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.963 ea
Line Total: USD 17.96 
Availability - 335
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
335
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 17.963
10 : USD 17.1695
30 : USD 13.386
60 : USD 13.386
120 : USD 13.11
270 : USD 13.041
510 : USD 12.857
2520 : USD 12.8455

   
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We are delighted to provide the TP65H050WSQA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP65H050WSQA and other electronic components in the MOSFETs category and beyond.

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TP65H050WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description Features The TP65H050WS 650V, 50m Gallium Nitride (GaN) FET AEC-Q101 qualified GaN technology is a normally-off automotive (AEC-Q101) qualified device. It Junction temperature rating of 175C combines state-of-the-art high voltage GaN HEMT and low Dynamic R production tested DS(on)eff voltage silicon MOSFET technologiesoffering superior Robust design, defined by reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Improves efficiency/operation frequencies over Si AN0010: Paralleling GaN FETs Enables AC-DC bridgeless totem-pole PFC designs Increased power density Reduced system size and weight Ordering Information Overall lower system cost Package Easy to drive with commonly-used gate drivers Part Number Package Configuration GSD pin layout improves high speed design TP65H050WSQA 3 Lead TO-247 Source Applications Automotive TP65H050WSQA Datacom TO-247 Broad industrial (top view) PV inverter S Key Specifications V (V) 650 DSS V (V) 800 DSS(TR) R (m) max* 60 DS(on)eff G Q (nC) typ 125 RR S D Q (nC) typ 16 G * Dynamic on-resistance see Figures 17 and 18 Common Topology Power Recommendations CCM bridgeless totem-pole* 3080W max Hard-switched inverter** 3670W max Conditions: F =45kHz T =115C T =90C insulator between SW J HEATSINK device and heatsink (6 mil Sil-Pad K-10) power de-rates at lower voltages with constant current Cascode Schematic Symbol Cascode Device Structure * VIN=230VAC VOUT=390VDC ** VIN=380VDC VOUT=240VAC March 1, 2021 2018 Transphorm Inc. Subject to change without notice. tp65h050wsqa.3 1 TP65H050WSQA Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a VDSS(TR)(V) Transient drain to source voltage 800 V V Gate to source voltage 20 GSS P Maximum power dissipation T =25C 150 W D C b Continuous drain current T =25C 36 A C I D b Continuous drain current T =100C 25 A C IDM Pulsed drain current (pulse width: 10s) 150 A c (di/dt) Reverse diode di/dt, repetitive 1600 A/s RDMC d (di/dt) Reverse diode di/dt, transient 3000 A/s RDMT T Case -55 to +175 C C Operating temperature T Junction -55 to +175 C J T Storage temperature -55 to +175 C S e TSOLD Soldering peak temperature 260 C - Mounting Torque 80 N cm Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Maximum Unit R Junction-to-case 1.0 C/W JC R Junction-to-ambient 40 C/W JA March 1, 2021 transphormusa.com tp65h050wsqa.3 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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