DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM Dual Silicon Planer Epitaxial NPN Transistors Hermetic Ceramic Surface Mount Package Designed For High Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A Each Side Total Device V Collector Base Voltage 40V CBO V Collector Emitter Voltage 15V CEO V Collector Emitter Voltage 40V CES V Emitter Base Voltage 4.5V EBO I Continuous Collector Current 200mA C P T = 25C Total Power Dissipation at 360mW 500mW D A Derate Above 25C 2.06mW/C 2.86mW/C P T = 125C Total Power Dissipation at 360mW 500mW D SP Derate Above 125C 4.80mW/C 6.67mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters EachSide Total Device R Thermal Resistance, Junction To Ambient 486C/W 350C/W JA R Thermal Resistance, Junction To Solder Point 208.3C/W 150C/W JSP Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 4140 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM ELECTRICAL CHARACTERISTICS (Each Side , T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units (1) Collector-Emitter V I = 10mA I = 0 15 V (BR)CEO C B Breakdown Voltage I V = 20V I = 0 Collector-Cut-Off Current 0.4 CES CE B V = 40V I = 0 10 CB E V = 32V I = 0 0.2 CB E I Collector-Cut-Off Current CBO V = 20V I = 0 CB E 30 (2) T = 150C A A V = 4.5V I = 0 10 EB C I Emitter-Cut-Off Current EBO V = 4V I = 0 0.25 EB C V = 10V V = -0.25V CE BE I Collector Cut-Off Current 30 CEX T = 125C A I = 10mA V = 0.35V 40 120 C CE I = 30mA V = 0.4V 30 120 C CE (1) Forward-current transfer h I = 10mA V = 1.0V 40 120 FE C CE ratio T = -55C 20 A I = 100mA V = 1.0V 20 120 C CE I = 10mA I = 1.0mA 0.2 C B T = 125C 0.3 A (1) Collector-Emitter Saturation V CE(sat) Voltage I = 30mA I = 3mA 0.25 C B I = 100mA I = 10mA 0.45 C B I = 10mA I = 1.0mA 0.7 0.85 V C B T = 125C 0.59 A (1) Base-Emitter Saturation V T = -55C 1.02 BE(sat) A Voltage I = 30mA I = 3mA 0.9 C B I = 100mA I = 10mA 0.8 1.2 C B NNNNooootttteeeessss (1) Pulse Width 300us, 2% (2) By design only, not a production test. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 4140 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: