Hi-Reliability Optically Coupled Isolator JAN/JANTX/JANTXV 4N47, 4N48, 4N49 A Features: TO-78 hermetically sealed package High current transfer ratio 1 kV electrical isolation Base contact provided for conventional transistor biasing JAN, JANTX and JANTXV devices processed to MIL-PRF-19500 Patent No. 4124860 Description: Each isolator in this series consists of an infrared emitting diode and a NPN silicon phototransistor, which are mounted in a hermetically sealed TO -78 package. Devices are designed for military and/or harsh environments. The suffix letter A denotes the collector is electrically isolated from the case. The JAN / JANTX / JANTXV 4N47, 4N47A, 4N48, 4N48A, 4N49, and 4N49A devices are processed to MIL-PRF-19500/548. This series of 4N products are JEDEC registered, DSCC qualified. Please contact your local representative for more information. Applications: High-voltage isolation between input and output Electrical isolation in dirty environments Industrial equipment Medical equipment Office equipment Pin Function Pin Function 3 Collector 5 Anode 2 Base 6 Open 1 Emitter 7 Cathode General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev G 08/2019 Page 1 TT electronics plc Form 500-1080-001 Rev - 06/2019 Hi-Reliability Optically Coupled Isolator JAN/JANTX/JANTXV 4N47, 4N48, 4N49 A Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage Temperature Range -55 C to +150 C Operating Temperature Range -55 C to +125 C (1) Input-to-Output Isolation Voltage 1.00 kVDC (2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C Input Diode Forward DC Current (65 C or below) 40 mA Reverse Voltage 2 V (3) Power Dissipation 60 mW Output Phototransistor: Continuous Collector Current 50 mA Collector-Emitter Voltage 40 V Collector-Base Voltage 45 V Emitter -Base Voltage 7.0 V (4) Power Dissipation 300 mW Notes: 1. Measured with input leads shorted together and output leads shorted together. 2. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1.0 mW/ C above 65 C. 4. Derate linearly 3.0 mW/ C above 25 C. Ordering Information V Processing CE Part Isolation I (mA) F (Volts) MIL-PRF- Number Voltage (kV) Typ / Max Max 195000 JAN4N47 or JAN4N47A JANTX4N47 or JANTX4N47A JANTXV4N47 or JANTXV4N47A JAN4N48 or JAN4N48A JANTX4N48 or JANTX4N48A 1 1 / 40 40 548 JANTXV4N48 or JANTXV4N4A8 JAN4N49 or JAN4N49A JANTX4N49 or JANTX4N49A JANTXV4N49 or JANTXV4N49A General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev G 08/2019 Page 2 TT electronics plc Form 500-1080-001 Rev - 06/2019