V23990-P623-F24-PM

V23990-P623-F24-PM preliminary datasheet fast PACK 0 H 2nd gen 600V / 50A Features flow 0 housing Low inductive design Clip-in PCB mounting Target Applications Schematic Distributed Power Generation Welding Types V23990-P623-F24 P623-F24 Maximum Ratings Condition Parameter Symbol Value Unit Transistor H-bridge (IGBT) V Collector-emitter break down voltage 600 V CE T =80C 43 h DC collector current I T =T max A C j j T =80C 50 c Repetitive peak collector current I tp limited by T max 150 A cpuls j T =80C 79 h Power dissipation per IGBT P T =T max W tot j j T =80C 120 c Gate-emitter peak voltage V 20 V GE Tj=125C V =15V SC withstand time* t 6 s SC GE V =360V CC T max Maximum junction temperature 175 C j * It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits Diode H-bridge T =80C 41 h DC forward current I T =T max A F j j T =80C 50 c Repetitive peak forward current I tp limited by T max 150 A FRM j T =80C 64 h P T =T max Power dissipation per Diode W tot j j T =80C c 97 T max Maximum junction temperature 175 C j Copyright by Vincotech 1 Revision: 2V23990-P623-F24-PM preliminary datasheet Maximum Ratings Condition Parameter Symbol Value Unit Thermal properties Storage temperature T -40+125 C stg T Operation temperature -40+125 C op Insulation properties Insulation voltage V t=1min 4000 Vdc is Creepage distance min 12,7 mm Clearance min 12,7 mm Copyright by Vincotech 2 Revision: 2