X-On Electronics has gained recognition as a prominent supplier of VO221AT transistor output optocouplers across the USA, India, Europe, Australia, and various other global locations. VO221AT transistor output optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for transistor output optocouplers, ensuring timely deliveries around the world.

VO221AT Vishay

VO221AT electronic component of Vishay
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Part No.VO221AT
Manufacturer: Vishay
Category:Transistor Output Optocouplers
Description: Transistor Output Optocouplers Dual Ch Phototrnstr CTR>100%
Datasheet: VO221AT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.5399 ea
Line Total: USD 1079.8

Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 2000
Multiples : 2000
2000 : USD 0.4081
4000 : USD 0.4081
10000 : USD 0.4022

     
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We are delighted to provide the VO221AT from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VO221AT and other electronic components in the Transistor Output Optocouplers category and beyond.

VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES 1 A 8 NC Isolation test voltage, 4000 V RMS 2 7 B C Material categorization: For definitions of compliance please see NC 3 6 C www.vishay.com/doc 99912 NC 4 5 E i179022-2 AGENCY APPROVALS i179074 C UL1577, file no. E52744 system code Y cUL - file no. E52744, equivalent to CSA bulletin 5A DESCRIPTION DIN EN 60747-5-5 (VDE 0884-5) approved, contact The VO221AT, VO222AT, VO223AT are high current transfer customer service if this option is required ratio (CTR) optocouplers with a gallium arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector. The device has a CTR tested at 1 mA LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL. ORDERING INFORMATION SOIC-8 VO 2 2 A T PART NUMBER 6.1 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL 100 200 500 SOIC-8 VO221AT VO222AT VO223AT ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V 6V R Peak forward current 1 s, 300 pps I 1A FM Forward continuous current I 60 mA F Power dissipation P 90 mW diss Derate linearly from 25 C 1.2 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 5V ECO Collector base breakdown voltage BV 70 V CBO I I 50 mA Cmax. DC Cmax. DC I t < 1 ms I 100 mA Cmax. Cmax. Power dissipation P 150 mW diss Rev. 1.2, 22-Nov-12 Document Number: 81954 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Derate linearly from 25 C 2mW/C Isolation test voltage t = 1 s V 4000 V ISO RMS Total package dissipation P 240 mW tot (at 25 C ambient) (LED and detector) Derate linearly from 25 C 3.2 mW/C Storage temperature T - 40 to + 150 C stg Operating temperature T - 40 to + 100 C amb Soldering time at 260 C T 10 s sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 1 mA V 11.5 V F F Reverse current V = 6 V I 0.1 100 A R R Capacitance V = 0 V, f = 1 MHz C 25 pF R O OUTPUT Collector emitter breakdown voltage I = 100 A BV 30 V C CEO Emitter collector breakdown voltage I = 10 A BV5V C ECO Collector base breakdown voltage I = 10 A BV 70 V C CBO Collector emitter leackage current V = 20 V I 40 nA CE CEO Collector base current ICBO 1 nA Emitter base current I 1nA EBO Collector emitter capacitance V = 10 V C 3.4 pF CE CE Saturation voltage, collector emitter I = 0.5 mA V 1V CE CEsat COUPLER Capacitance (input to output) C 0.5 pF IO Note Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VO221AT CTR 100 % DC I /I I = 1 mA, V = 5 V VO222AT CTR 200 % C F F CE DC VO223AT CTR 500 % DC Rev. 1.2, 22-Nov-12 Document Number: 81954 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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