VS-50PF(R)...(W) High Voltage Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FEATURES
50PF(R)... 50PF(R)...W
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Wire version available
Low thermal resistance
Designed and qualified for multiple level
Material categorization: for definitions of compliance
DO-5 (DO-203AB) DO-5 (DO-203AB)
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Converters
PRIMARY CHARACTERISTICS
Power supplies
I 50 A
F(AV)
Package DO-5 (DO-203AB)
Machine tool controls
Circuit configuration Single
Welding
Any high voltage input rectification bridge
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
50 A
I
F(AV)
T 128 C
C
I 78 A
F(RMS)
50 Hz 570
I A
FSM
60 Hz 595
50 Hz 1600
2 2
I t A s
60 Hz 1450
V Range 1400 to 1600 V
RRM
T -55 to +160 C
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM
RRM RSM RRM
TYPE VOLTAGE
PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C
J
NUMBER CODE
V V mA
140 1400 1650
VS-50PF(R)...(W) 4.5
160 1600 1900
Revision: 11-Jan-18 Document Number: 93517
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-50PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
50 A
Maximum average forward current
I 180 conduction, half sine wave
F(AV)
at case temperature
128 C
Maximum RMS forward current I 78 A
F(RMS)
t = 10 ms 570
No voltage
reapplied
t = 8.3 ms 595
Maximum peak, one cycle forward,
I A
FSM
non-repetitive surge current
t = 10 ms 480
100 % V
RRM
reapplied
t = 8.3 ms 500
Sinusoidal half wave,
initial T = 150 C
t = 10 ms J 1600
No voltage
reapplied
t = 8.3 ms 1450
2 2 2
Maximum I t for fusing I t A s
t = 10 ms 1150
100 % V
RRM
reapplied
t = 8.3 ms 1050
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A s
Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.77 V
F(TO) F(AV) F(AV) J J
Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 4.30 m
f F(AV) F(AV) J J
Maximum forward voltage drop V I = 125 A, T = 25 C, t = 400 s rectangular wave 1.50 V
FM pk J p
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
T , T -55 to 160 C
J Stg
storage temperature range
Maximum thermal resistance,
R DC operation 0.51
thJC
junction to case
K/W
Thermal resistance,
R Mounting surface, smooth, flat and greased 0.25
thCS
case to heatsink
3.4
(1)
Not lubricated thread, tighting on nut
(30)
2.3
(1)
Lubricated thread, tighting on nut
Maximum allowable
(20)
N m
mounting torque
(lbf in)
4.2
(+0 %, -10 %) (2)
Not lubricated thread, tighting on hexagon
(37)
3.2
(2)
Lubricated thread, tighting on hexagon
(28)
15.8 g
Approximate weight
0.56 oz.
Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
R CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180 0.11 0.10
120 0.16 0.16
90 0.20 0.22 T = T maximum K/W
J J
60 0.29 0.31
30 0.49 0.50
Note
The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC
thJC
Revision: 11-Jan-18 Document Number: 93517
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000