VS-ST303C Series
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Vishay Semiconductors
Inverter Grade Thyristors
(PUK Version), 620 A
FEATURES
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case E-PUK (TO-200AB)
E-PUK (TO-200AB)
High surge current capability
Low thermal impedance
High speed performance
PRIMARY CHARACTERISTICS
Designed and qualified for industrial level
Package E-PUK (TO-200AB)
Material categorization: for definitions of compliance
Circuit configuration Single SCR
please see www.vishay.com/doc?99912
I 620 A
T(AV)
V /V 400 V, 800 V, 1000 V, 1200 V
DRM RRM
TYPICAL APPLICATIONS
V 2.16 V
TM
Inverters
I at 50 Hz 7950 A
TSM
Choppers
I at 60 Hz 8320 A
TSM
Induction heating
I 200 mA
GT
All types of force-commutated converters
T /T 55 C
C hs
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
620 A
I
T(AV)
T 55 C
hs
1180 A
I
T(RMS)
T 25 C
hs
50 Hz 7950
I A
TSM
60 Hz 8320
50 Hz 316
2 2
I t kA s
60 Hz 289
V /V 400 to 1200 V
DRM RRM
t Range 10 to 30 s
q
T -40 to 125 C
J
Note
t = 10 s to 20 s for 400 V to 800 V devices
q
t = 15 s to 30 s for 1000 V to 1200 V devices
q
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V /V , MAXIMUM V , MAXIMUM I /I MAXIMUM
DRM RRM RSM DRM RRM
VOLTAGE
TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM
J J
CODE
V V mA
04 400 500
08 800 900
VS-ST303C..C 50
10 1000 1100
12 1200 1300
Revision: 28-Aug-17 Document Number: 94373
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-ST303C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM I I
TM TM
FREQUENCY UNITS
180 el 180 el 100 s
50 Hz 1314 1130 2070 1940 6930 6270
400 Hz 1260 1040 2190 1880 3440 2960
A
1000 Hz 900 700 1900 1590 1850 1540
2500 Hz 340 230 910 710 740 560
Recovery voltage V 50 50 50
r
V
Voltage before turn-on V V V V
d DRM DRM DRM
Rise of on-state current dI/dt 50 - - A/s
Heatsink temperature 40 55 40 55 40 55 C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /F
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
620 (230) A
Maximum average on-state current 180 conduction, half sine wave
I
T(AV)
at heatsink temperature double side (single side) cooled
55 (85) C
Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 1180
T(RMS)
t = 10 ms 7950
No voltage
reapplied
t = 8.3 ms 8320 A
Maximum peak, one half cycle,
I
TSM
non-repetitive surge current
t = 10 ms 6690
100 % V
RRM
reapplied
t = 8.3 ms 7000
Sinusoidal half wave,
initial T = T maximum
J J
t = 10 ms 316
No voltage
reapplied
t = 8.3 ms 289
2 2 2
Maximum I t for fusing I t kA s
t = 10 ms 224
100 % V
RRM
reapplied
t = 8.3 ms 204
2 2 2
Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 3160 klA s
I = 1255 A, T = T maximum,
TM J J
Maximum peak on-state voltage V 2.16
TM
t = 10 ms sine wave pulse
p
V
Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.44
T(TO)1 T(AV) T(AV) J J
High level value of threshold voltage V (I > x I ), T = T maximum 1.48
T(TO)2 T(AV) J J
Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.57
t1 T(AV) T(AV) J J
m
High level value of forward slope
r (I > x I ), T = T maximum 0.56
t2 T(AV) J J
resistance
Maximum holding current I T = 25 C, I > 30 A 600
H J T
mA
Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000
L J A a G
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum non-repetitive rate of rise T = T maximum, V = Rated V
J J DRM DRM
dI/dt 1000 A/s
of turned on current I = 2 x dI/dt
TM
T = 25 C, V = Rated V , I = 50 A DC, t = 1 s
J DM DRM TM p
Typical delay time t 0.83
d
Resistive load, gate pulse: 10 V, 5 source
s
minimum T = T maximum,
10
J J
(1)
t I = 550 A, commutating dI/dt = 40 A/s
Maximum turn-off time
q TM
maximum 30
V = 50 V, t = 500 s, dV/dt: see table in device code
R p
Note
(1)
t = 10 s to 20 s for 400 V to 800 V devices; t = 15 s to 30 s for 1000 V to 1200 V devices
q q
Revision: 28-Aug-17 Document Number: 94373
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000