INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/407D shall be completed by 20 April 2004. 20 January 2004 SUPERSEDING MIL-PRF-19500/407C 15 September 1998 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3055, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power, transistor. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. * 1.3 Maximum ratings. Unless otherwise specified, T = +25 C. A Type P T T = +25 C T = +25 C V V V I I T and T R A C CBO CEO EBO C B STG J JC (1) (2) (3) (4) W W V dc V dc V dc A dc A dc C C/W 2N3055 6 117 100 70 7 15 7 -65C to +200C 1.5 (1) T = room ambient as defined in the general requirements of 4.5 of MIL-STD-750. A (2) Derate linearly 34.2 mW/ C for T > +25 C. A (3) See figure 2 for temperature-power derating curves. (4) See figure 3 for transient thermal impedance graph. * 1.4 Primary electrical characteristics. h C h V Pulse response FE2 obo fe CE(sat) I = 4 A dc I = 0, V = 10 V dc I = 1 A dc I = 4 A dc C E CB C C V = 4 V dc 100 kHz f 1 MHz V = 4 V dc I = 0.4 A dc t t CE CE B on off (1) f = 100 kHz (1) pF V dc s s Min 20 8 Max 60 700 40 0.75 6 12 (1) Pulsed (see 4.5.1). * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconductor dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at www.dodssp.daps.mil. AMSC N/A FSC 5961 MIL-PRF-19500/407D Dimensions Symbol Notes Inches Millimeters Min Max Min Max CD .875 22.22 CH .270 .380 6.86 9.65 HT .060 .055 1.52 1.40 HR .495 .525 12.57 13.3 HR .131 .188 3.33 4.78 1 LD .038 .043 0.97 1.09 7 LL .312 .500 7.92 12.70 L .050 1.27 1 MHD .151 .165 3.84 4.19 MHS 1.177 1.197 29.90 30.40 NOTES: PS .420 .440 10.67 11.18 4 1. Dimensions are in inches. 2. Millimeters are given for general information only. PS .205 .225 .521 5.72 4 1 3. Terminal 1, emitter terminal 2,base case, collector. 4. These dimensions should be measured at points .050- s .655 .675 16.64 17.15 1 .055 inch (1.27-1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 5. The seating plane of the header shall be flat within .004 inch (0.10 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .006 inch (0.15 mm) concave to .006 inch (0.15 mm) convex overall. 6. Collector shall be electrically connected to the case. 7. LD applies between L and LL. Diameter is uncontrolled in L . 1 1 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions of transistor types 2N3055 (TO-3). 2