IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) NXP Semiconductors N.V. {year}. All rights reserved becomes WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn SemiconductorsBTA208X-600E
3Q Hi-Com Triac
22 May 2014 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186Afull pac plastic
package. Thisseries triac balances the requirements of commutation performance
and gate sensitivity. Thesensitive gatseries is intended for interfacing with low
power drivers including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power logic circuits and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats
General purpose motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V repetitive peak off- - - 600 V
DRM
state voltage
I non-repetitive peak on- full sine wave; T = 25 C; - - 65 A
TSM j(init)
state current
t = 20 ms; Fig. 4; Fig. 5
p
I RMS on-state current full sine wave; T 73 C; Fig. 1; Fig. 2; - - 8 A
T(RMS) h
Fig. 3
Static characteristics
I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - - 10 mA
GT D T
T = 25 C; Fig. 7
j
V = 12 V; I = 0.1 A; T2+ G-; - - 10 mA
D T
T = 25 C; Fig. 7
j
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TO-220F