CGHV40200PP 200 W, 50 V, GaN HEMT Description Crees CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making Package Type: 440199 the CGHV40200PP ideal for linear and compressed amplifier PN: CGHV40200PP circuits. The transistor is available in a 4-lead flange package. Typical Performance Over 1.7-1.9 GHz (T = 25C), CW C Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain 21.7 21.0 20.1 dB Gain P = 38 dBm 16.5 16.1 15.4 dB IN P P = 38 dBm 270 250 218 W OUT IN Drain Efficiency P = 38 dBm 64 67 65 % IN Features Applications 2-Way Private Radio Up to 3.0 GHz Operation Broadband Amplifiers 21 dB Small Signal Gain at 1.8 GHz 250 W typical P Cellular Infrastructure SAT 67% Efficiency at P Test Instrumentation SAT 50 V Operation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 1.3 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV40200PP 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Forward Gate Current I 41.6 mA 25C GMAX 1 Maximum Drain Current I 8.7 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 0.94 C/W 85C JC 3,4 Case Operating Temperature T -40, +70 C C Notes: 1 Current limit for long term, reliable operation per side of the device 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 CGHV40200PP at P = 166 W DISS 4 See also, the Power Dissipation De-rating Curve on Page Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 41.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 2.0 A GS(Q) DC DS D 2 Saturated Drain Current I 27.0 38.7 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 41.6 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 1.8 GHz unless otherwise noted) C 0 Small Signal Gain G 17.75 20.0 dB V = 50 V, I = 1.2 A, P = 10 dBm SS DD DQ IN Power Gain P 15.05 16.0 - dB V = 50 V, I = 1.2 A, P = 38 dBm G DD DQ IN Power Output P 200 250 W V = 50 V, I = 1.2 A, P = 38 dBm OUT DD DQ IN 5 Drain Efficiency 60 69 % V = 50 V, I = 1.2 A, P = 38 dBm DD DQ IN No damage at all phase angles, Y Output Mismatch Stress VSWR 3 : 1 V = 28 V, I = 1.2 A, P = 200 W CW DD DQ OUT 6 Dynamic Characteristics Input Capacitance C 29.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 7.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.61 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging per side of device 2 Scaled from PCM data 3 Measured in CGHV40200PP-TB 4 I of 1.2 A is by biasing each device at 0.6 A DQ 5 Drain Efficiency = P / P OUT DC 6 Capacitance values are for each side of the device Rev 1.3 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com