Product Information

30055-6

30055-6 electronic component of Allied Controls

Datasheet
TVS Diodes - Transient Voltage Suppressors 47V 600W Unidirectional

Manufacturer: Allied Controls
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 68.1534 ea
Line Total: USD 68.15

145 - Global Stock
Ships to you between
Thu. 25 Apr to Wed. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
145 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 1
Multiples : 1

Stock Image

30055-6
Allied Controls

1 : USD 67.6125
10 : USD 19.775
25 : USD 18.625
50 : USD 17.675
100 : USD 16.675

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
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P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors www.onsemi.com Unidirectional* PLASTIC SURFACE MOUNT The SMB series is designed to protect voltage sensitive ZENER OVERVOLTAGE components from high voltage, high energy transients. They have TRANSIENT SUPPRESSORS excellent clamping capability, high surge capability, low zener 5.8171 VOLTS impedance and fast response time. The SMB series is supplied in ON Semiconductors exclusive, cost-effective, highly reliable 600 WATT PEAK POWER SURMETIC package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. SMB CASE 403A Specification Features: PLASTIC Working Peak Reverse Voltage Range 5.8 to 171 V Standard Zener Breakdown Voltage Range 6.8 to 200 V Cathode Anode Peak Power 600 W 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model MARKING DIAGRAM Maximum Clamp Voltage Peak Pulse Current Low Leakage < 5 A Above 10 V UL 497B for Isolated Loop Circuit Protection AYWW Response Time is Typically < 1 ns xx SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant* A = Assembly Location Y = Year Mechanical Characteristics: WW = Work Week xx = Device Code (Refer to page 3) CASE: Void-free, transfer-molded, thermosetting plastic = PbFree Package FINISH: All external surfaces are corrosion resistant and leads are (Note: Microdot may be in either location) readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds ORDERING INFORMATION LEADS: Modified LBend providing more contact area to bond pads Device Package Shipping POLARITY: Cathode indicated by polarity band P6SMBxxxAT3G SMB 2,500 / MOUNTING POSITION: Any (PbFree) Tape & Reel SZP6SMBxxxAT3G SMB 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices. Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 14 P6SMB6.8AT3/DP6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) T = 25C, Pulse Width = 1 ms P 600 W L PK DC Power Dissipation T = 75C Measured Zero Lead Length (Note 2) P 3.0 W L D Derate Above 75C 40 mW/C Thermal Resistance from JunctiontoLead R 25 C/W JL DC Power Dissipation (Note 3) T = 25C P 0.55 W A D Derate Above 25C 4.4 mW/C Thermal Resistance from JunctiontoAmbient R 226 C/W JA Forward Surge Current (Note 4) T = 25C I 100 A A FSM Operating and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 10 X 1000 s, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 3.5 V Max. I A F F (Note 4) = 30 A, V = 1.3 V Max. I (Note 4) = 3 A) (Note 5) F F I Symbol Parameter I I Maximum Reverse Peak Pulse Current F PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V C BR RWM V V Breakdown Voltage I I BR T V R F I T I Test Current T Maximum Temperature Coefficient of V V BR BR I Forward Current F I PP V Forward Voltage I F F 5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive UniDirectional TVS duty cycle www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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