About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
GN2470K4-G


IGBT Transistors 700V 3.5A IGBT
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Microchip 7211
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USD 1.09
Multiples of: 500

Single700 V +/- 20 V    TO - 252 (DPAK) - 3ReelSiSmd/Smt2.5 W- 55 C+ 150 C 
APT25GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 3849
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USD 6.3969
Multiples of: 1

Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
APT50GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 805
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USD 13.9955
Multiples of: 1

      625 W   POWER MOS 7®, PT     
APT75GN120LG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 502
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USD 15.893
Multiples of: 1

Single1.2 kV1.7 V30 V200 A600 nA  TO - 264 - 3TubeSiThrough Hole833 W- 55 C+ 150 C 
APT25GN120SG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 476
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USD 7.4234
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Single1.2 kV1.7 V30 V67 A600 nA  D3PAK - 3TubeSiSmd/Smt272 W- 55 C+ 150 C 
APT30GS60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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Microchip 213
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USD 7.1413
Multiples of: 1

         TubeSi     
APT30GP60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 203
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USD 8.4525
Multiples of: 1

      463 W   POWER MOS 7®, PT     
APT33GF120B2RDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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Microchip 131
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USD 17.8648
Multiples of: 1

      357 W   NPT     
APT35GN120BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 128
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USD 8.2225
Multiples of: 1

Single1.2 kV1.7 V30 V94 A600 nA379 W TO - 247 - 3TubeSiThrough Hole379 W- 55 C+ 150 C 
APT15GT120BRDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip 121
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USD 5.4897
Multiples of: 1

Single1.2 kV3.2 V30 V36 A480 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
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