About IGBT Transistors

NTE IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NTE3323


Transistor: IGBT; 1.2kV; 25A; 200W; TO3P
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NTE 11
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USD 29.393
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      200 W         
NTE3300


Transistor: IGBT; 400V; 10A; 30W; TO220FP
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NTE 9
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USD 7.6937
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      30 W         
NTE3322


Transistor: IGBT; 900V; 60A; 170W; TO3P
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NTE 7
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USD 31.148
Multiples of: 1

      170 W         
NTE3320


Transistor: IGBT; 600V; 50A; 240W; TO3P
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NTE 4
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USD 19.8232
Multiples of: 1

      240 W         
NTE3311


Transistor: IGBT; 600V; 25A; 150W; TO3P
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NTE 1
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USD 11.4883
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      150 W         
NTE3301


Transistor: IGBT; 400V; 15A; 40W; TO220FP
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NTE 0
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USD 5.2272
Multiples of: 1

      40 W         
NTE3310


Transistor: IGBT; 600V; 15A; 100W; TO3P
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NTE 0
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USD 11.661
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      100 W         
NTE3302


Transistor: IGBT; 600V; 8A; 30W; TO220FP
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NTE 0
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USD 11.664
Multiples of: 1

      30 W         
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