Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP10NC60KD


Transistor: IGBT; 600V; 10A; 65W; TO220AB
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STMicroelectronics 206192
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between Thu. 02 May to Wed. 08 May
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USD 0.7271

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      65 W         
STGWA40HP65FB2


IGBT Transistors Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT
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STMicroelectronics 121056
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between Thu. 02 May to Wed. 08 May
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USD 2.1929

Multiples of: 1

Single650 V1.55 V20 V72 A250 nA  TO - 247 - 3  Through Hole227 W- 55 C+ 175 CStgwa40hp65fb2
STGB6NC60HDT4


IGBT Transistors PowerMESH TM IGBT
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STMicroelectronics 68870
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between Thu. 02 May to Wed. 08 May
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USD 0.7064

Multiples of: 1000

Single600 V2.7 V+/- 20 V 100 nA80 W D2PAK - 3ReelSiSmd/Smt80 W- 55 C+ 150 CStgb6nc60hd
STGWA50HP65FB2


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 55886
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between Thu. 02 May to Wed. 08 May
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USD 1.3932

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STGF7NC60HD


Transistor: IGBT; 600V; 14A; 25W; TO220FP
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STMicroelectronics 35220
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between Thu. 02 May to Wed. 08 May
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USD 0.7379

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      25 W         
STGWA25H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics 28518
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between Thu. 02 May to Wed. 08 May
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USD 3.0046

Multiples of: 1

Single1200 V2.5 V20 V50 A250 nA    SiThrough Hole375 W- 55 C+ 175 CStgwa25h120df2
STGF14NC60KD


Transistor: IGBT; 600V; 7A; 28W; TO220FP
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STMicroelectronics 27577
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between Thu. 02 May to Wed. 08 May
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USD 0.8501

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      28 W         
STGF7NB60SL


IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
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STMicroelectronics 25666
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between Thu. 02 May to Wed. 08 May
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USD 1.204

Multiples of: 1

Single600 V1.2 V+/- 20 V15 A+/- 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf7nb60sl
STGWA40H65DFB2


IGBT Transistors Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package
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STMicroelectronics 20922
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between Thu. 02 May to Wed. 08 May
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USD 2.3868

Multiples of: 1

Single650 V1.55 V20 V72 A250 nA  TO - 247 - 3TubeSiThrough Hole230 W- 55 C+ 175 C 
STGP7NC60HD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics 18527
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between Thu. 02 May to Wed. 08 May
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USD 0.7901

Multiples of: 1

      80 W         
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