About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGN400N60A3


IGBT Transistors 400 Amps 600V
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USD 42.7929
Multiples of: 1

Single600 V1.25 V20 V400 A400 nA  SOT - 227BTubeSiSmd/Smt830 W- 55 C+ 150 CIxgn400n60
IXYN140N120A4


IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 SOT-227B miniBLOC
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USD 43.4752
Multiples of: 1

         Tube      
IXYN150N60B3


IGBT Transistors IGBT XPT-GENX3 (MINI
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IXYS 0
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USD 43.6929
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Single600 V1.77 V20 V250 A200 nA  SOT - 227B - 4 SiScrew Mount830 W- 55 C+ 175 C 
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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USD 44.0515
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Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
IXYN50N170CV1


IGBT Transistors 1700V/120A High Volt
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IXYS 0
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USD 44.7697
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Single1700 V2.8 V20 V120 A100 nA  SOT - 227B - 4TubeSiSmd/Smt880 W- 55 C+ 175 C 
MG75HF12MIC1-A1-0000


IGBTs ROHS
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USD 44.8962
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APT45GP120JDQ2


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 0
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USD 45.142
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         TubeSi     
APT50GT120JRDQ2


IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP
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USD 45.4162
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          NPT     
GD100HFX65C1S


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USD 45.549
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IXBH20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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USD 45.769
Multiples of: 1

Single3 kV2.7 V+/- 20 V50 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
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