About MOSFET

GOFORD MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
G50N03K


MOSFET N Channel 30V 65A(Tc) 2.5V @ 250uA 7mΩ @ 20A,10V TO-252 RoHS
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GOFORD 2273
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USD 0.1554
Multiples of: 1

                   
25P06


MOSFET P Trench 60V 25A (Tc) 3.5V @ 250uA 45 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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GOFORD 2229
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USD 0.3008
Multiples of: 1

                   
G12P03D3


30V 12A 17mΩ@10V,6A 3W 1.6V@250uA 158pF@15V P Channel 1.253nF@15V 24.5nC@10V -55℃~+150℃@(Tj) DFN3x3-8L MOSFETs ROHS
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GOFORD 2069
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USD 0.1019
Multiples of: 1

                   
G70P04K


40V 70A 156W 7mΩ@10V,10A 1.4V@250uA 456pF@20V P Channel 4714pF@20V 42nC@10V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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GOFORD 2066
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USD 0.5039
Multiples of: 1

                   
G75P04K


7.5mΩ TO-252 MOSFETs ROHS
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GOFORD 2033
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USD 0.4497
Multiples of: 1

                   
G110N06K


MOSFET N Channel 55V 110A(Tc) 2V @ 250uA 6.4mΩ @ 40A,10V TO-252 RoHS
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GOFORD 2004
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USD 0.4333
Multiples of: 1

                   
G16P03S


MOSFET P Channel 30V 16A(Tc) 1.2V @ 250uA 12mΩ @ 3A,10V SOP-8 RoHS
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GOFORD 1998
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USD 0.1121
Multiples of: 5

                   
G18P03D3


30V 28A 7mΩ@10V,10A 40W 1.4V@250uA 295pF@15V P Channel 2060pF@15V 30nC@10V -55℃~+150℃@(Tj) DFN3x3-8L MOSFETs ROHS
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GOFORD 1984
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USD 0.2284
Multiples of: 1

                   
GT090N06S


SOP-8 MOSFETs ROHS
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GOFORD 1940
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USD 0.2054
Multiples of: 5

                   
G15N06K


60V 15A 31mΩ@10V,8A 40W 1.9V@250uA 37pF@30V N Channel 763pF@30V 25nC@10V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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GOFORD 1911
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USD 0.1659
Multiples of: 1

                   
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