About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC046N02KS G


MOSFET OptiMOS2 PWR TRANS 20V 80A
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Infineon 2910000
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USD 0.336
Multiples of: 5000

19 A20 V4.6 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSONReelSi1 Channel12 V Enhancement Optimos
BSC047N08NS3G


MOSFET N Channel 80V 18A 3.5V @ 90uA 4.7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 1455000
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USD 0.8575
Multiples of: 5000

                   
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 793977
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USD 0.0517
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
IPB039N10N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 630500
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USD 1.4893
Multiples of: 1000

160 A100 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263 - 7ReelSi1 Channel10 V88 nCEnhancement Optimos
SPD15P10PLGBTMA1


Infineon Technologies MOSFET P-Ch -100V 15A DPAK-2
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Infineon 589275
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USD 0.8523
Multiples of: 2500

15 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V47 nCEnhancement  
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 540411
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USD 0.0506
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 399110
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USD 0.0736
Multiples of: 1

            Optimos P3      
BSS83PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
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Infineon 389940
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USD 0.0818
Multiples of: 3000

            Sipmos      
BSS138WH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
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Infineon 145500
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USD 0.0454
Multiples of: 3000

            Sipmos      
2N7002DWH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
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Infineon 2910
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USD 0.0473
Multiples of: 3000

            Optimos      
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