About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ3985EV-T1_BE3


MOSFET P-CHANNEL 20V D-S
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Vishay Availability : 7249
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USD 0.2387

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           Cut Tape       
IPG20N04S4L-08


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon Availability : 7247
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USD 0.5588

Multiples of: 1

20 A40 V8.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C54 WSmd/SmtTDSON - 8ReelSi2 Channel16 V39 nC , 39 nCEnhancementAec - Q101Optimos
MGSF2N02ELT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 7240
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USD 0.0576

Multiples of: 10

                   
SQ9945BEY-T1_GE3


MOSFET 60V 5.4A 4W AEC-Q101 Qualified
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Vishay Availability : 7240
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USD 0.6024

Multiples of: 1

5.4 A60 V45 mOhms , 45 mOhmsN - Channel 1.5 V- 55 C+ 175 C4 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V12 nC , 12 nCEnhancementAec - Q101Trenchfet
AP3P3R0MT


MOSFET P Trench 30V 60A (Tc) 3V @ 250uA 3 mΩ @ 20A,10V PMPAK-5X6 RoHS
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APEC Availability : 7238
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USD 0.616

Multiples of: 1

                   
HCJ3134K


20V 1.2A 260mΩ N Channel SOT-723 MOSFETs ROHS
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HXY MOS Availability : 7236
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USD 0.0176

Multiples of: 20

                   
RS3E075ATTB


P-Channel 30 V 2W (Ta) Surface Mount 8-SOP-J
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ROHM Availability : 7235
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USD 0.3289

Multiples of: 1

7.5 A30 V18 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi1 Channel20 V25 nCEnhancement  
SSM6N35AFU,LF


MOSFET LowON Res MOSFET ID=.25A VDSS=20V
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Toshiba Availability : 7226
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USD 0.0704

Multiples of: 1

250 mA20 V750 mOhms , 750 mOhmsN - Channel 350 mV-+ 150 C285 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V340 pC , 340 pCEnhancement  
SI4401BDY(UMW)


SOP-8 MOSFETs ROHS
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Youtai Availability : 7224
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USD 0.0942

Multiples of: 5

                   
SI4946BEY-T1-E3-VB


60V 7A 28mΩ@10V 2 N-Channel SO-8 MOSFETs ROHS
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VBsemi Elec Availability : 7224
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USD 0.3551

Multiples of: 1

                   
R6003JND4TL1


MOSFETs 600V 1.3A SOT-223-3, PrestoMOS with integrated high-speed diode: R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS series, R60xxJNx series increases design flexibility while maintaini
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ROHM Availability : 7224
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USD 0.3883

Multiples of: 1

1.3 A600 V2.15 OhmsN - Channel 7 V- 55 C+ 150 C7.8 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8 nCEnhancement  
ZVP4424A


240V 200mA 9O@200mA,10V 750mW P Channel TO-92-3 MOSFETs ROHS
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Diodes Incorporated Availability : 7224
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USD 0.4895

Multiples of: 1

200 mA240 V9 OhmsP - Channel 700 mV- 55 C+ 150 C750 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel10 V Enhancement  
CMRDM3575 TR


MOSFET N AND P CHANNEL MOSFET
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Central Semiconductor Availability : 7222
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USD 0.166

Multiples of: 1

160 mA , 140 mA20 V1.5 Ohms , 4 OhmsN And P - Channel 400 mV , 1 V- 65 C+ 150 C125 mWSmd/SmtSOT - 963ReelSi2 Channel8 V458 pC , 500 pCEnhancement Attomini
BSC050N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
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Infineon Availability : 7219
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USD 0.2299

Multiples of: 1

            Optimos 3      
PHB66NQ03LT,118


Trans MOSFET N-CH 25V 66A 3-Pin(2+Tab) D2PAK T/R
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Nexperia Availability : 7219
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USD 0.9651

Multiples of: 1

           Tape And Reel    enhancement  
FQA9P25


MOSFET 250V P-Channel QFET
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ON Semiconductor Availability : 7208
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USD 1.793

Multiples of: 1

10.5 A250 V620 mOhmsP - Channel  - 55 C+ 150 C150 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Qfet
SI2369DS-T1-GE3


MOSFET -30V 29mOhm@-10V -7.6A P-CH
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Vishay Availability : 7202
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USD 0.1845

Multiples of: 5

- 7.6 A30 V29 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
IPB120P04P404ATMA2


P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
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Infineon Availability : 7200
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USD 2.001

Multiples of: 1

          TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263ABDigi - Reel®Mosfet (Metal Oxide)      
YJS4606A


Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
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Yangjie Availability : 7197
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USD 0.084

Multiples of: 1

                   
SP2004KNC


PDFN1006-3L MOSFETs ROHS
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Siliup Availability : 7178
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USD 0.0093

Multiples of: 50

                   
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