About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK6D385-100EX


MOSFET BUK6D385-100ESOT1220SOT1220
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Nexperia Availability : 7069
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USD 0.1199

Multiples of: 1

3.7 A100 V385 mOhmsN - Channel 1.3 V- 55 C+ 175 C15 WSmd/SmtDfn2020md - 6Cut TapeSi1 Channel20 V6.8 nCEnhancementAec - Q101 
WSP4606


MOSFET N & P Trench 30V 7A (Tc),6A (Tc) 2.5V @ 250uA 28 mΩ @ 6A,10V;38 mΩ @ 4A,4.5V SOP-8_150mil RoHS
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Winsok Availability : 7068
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USD 0.1269

Multiples of: 5

                   
TQM150NB04CR RLG


MOSFET 40V 41A Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 7065
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USD 0.4163

Multiples of: 1

           Cut Tape       
PNM723T703E0-2


MOSFET N Trench 40V 180mA 1.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-723 RoHS
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Prisemi Availability : 7061
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USD 0.0195

Multiples of: 20

                   
SI4838DY-T1-E3


MOSFET RECOMMENDED ALT 781-SI4838BDY-GE3
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Vishay Availability : 7061
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USD 1.54

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
DMG1012UWQ-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated Availability : 7058
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USD 0.055

Multiples of: 1

950 mA25 V450 mOhmsN - Channel 1 V- 55 C+ 150 C460 mWSMD/SMT Reel , Cut TapeSi1 Channel- 6 V , + 6 V1 nCEnhancement  
NVMFS5H663NLT1G


MOSFET T8 60V LOW COSS
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ON Semiconductor Availability : 7057
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USD 0.6151

Multiples of: 1

67 A60 V7.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C63 WSmd/SmtDFN - 5Cut Tape 1 Channel20 V17 nCEnhancementAec - Q101 
BSC028N06NS


Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
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Infineon Availability : 7055
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USD 0.9834

Multiples of: 1

100 A60 V2.8 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V37 nCEnhancement Optimos
ISZ040N03L5ISATMA1


30V 4mO@30A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon Availability : 7049
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USD 0.2255

Multiples of: 1

           Cut Tape       
IRLML0100TRPBF-HXY


100V 2.8A 310mΩ@10V,1A 1W 2.5V null SOT-23 MOSFETs ROHS
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HXY MOS Availability : 7045
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USD 0.0183

Multiples of: 20

                   
SI2333


SOT-23 MOSFETs ROHS
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PAKER Microelectronics Availability : 7042
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USD 0.0294

Multiples of: 10

                   
YJS9435A


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
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Yangjie Availability : 7037
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USD 0.084

Multiples of: 5

            Trench Power Lv      
DMTH4007LK3-13


MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A
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Diodes Incorporated Availability : 7037
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USD 0.3542

Multiples of: 1

70 A40 V5 mOhmsN - Channel 1 V- 55 C+ 175 C2.6 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V29.1 nCEnhancement  
BRCS80N03DP


TO-252-2 MOSFETs ROHS
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Blue Rocket Availability : 7034
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USD 0.0816

Multiples of: 5

                   
DMP2004DWK-7


Diodes Incorporated MOSFET Dual P-Channel
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Diodes Incorporated Availability : 7027
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USD 0.1181

Multiples of: 1

430 mA- 20 V900 mOhmsP - Channel8 V- 1 V- 65 C+ 150 C250 mWSmd/SmtSOT - 363 - 6Reel    Enhancement  
CJ2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 7022
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USD 0.0226

Multiples of: 20

                   
STN3NF06L


Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223
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STMicroelectronics Availability : 6954
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USD 0.1637

Multiples of: 5

   N Channel               
DMN10H700S-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated Availability : 6896
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USD 0.0627

Multiples of: 1

700 mA100 V700 mOhmsN - Channel 2 V- 55 C+ 150 C0.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.6 nCEnhancement  
FDV304P


Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R
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ON Semiconductor Availability : 6693
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USD 0.0287

Multiples of: 10

460 mA25 V1.1 OhmsP - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
IRFH8325TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC
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Infineon Availability : 2528
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USD 0.2061

Multiples of: 1

82 A30 V7.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C54 WSmd/SmtPQFN - 8ReelSi1 Channel20 V32 nC   
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