About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSD221N06TL


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 22A
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ROHM Availability : 5885
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USD 1.0645

Multiples of: 1

22 A60 V26 mOhmsN - Channel     Smd/SmtCPT - 3ReelSi1 Channel     
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 5883
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USD 0.2361

Multiples of: 3750

11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
SQ4050EY-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay Availability : 5880
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USD 0.5028

Multiples of: 1

19 A40 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V34 nCEnhancement TrenchFET
TSM4806CS RLG


MOSFET 20V, 28A, Single N-Channel Power MOSFET
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Taiwan Semiconductor Availability : 5873
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USD 0.1661

Multiples of: 1

28 A20 V16 mOhmsN - Channel 600 mV- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel4.5 V12.3 nCEnhancement  
SIR512DP-T1-RE3


MOSFETs SOT669 100V 100A N-CH MOSFET
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Vishay Availability : 5872
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USD 0.9427

Multiples of: 1

100 A100 V4.5 mOhmsN - Channel 4 V   SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V30.5 nCEnhancement PowerPak
IRLML2502


MOSFET N Trench 20V 4.2A 1.2V @ 50uA 45 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai Availability : 5868
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USD 0.0314

Multiples of: 10

                   
DMN62D1LFD-7


MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
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Diodes Incorporated Availability : 5868
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USD 0.0444

Multiples of: 5

400 mA60 V1.4 OhmsN - Channel20 V1 V- 55 C+ 150 C0.5 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.55 nCEnhancement Dmn6
IPL60R225CFD7AUMA1


MOSFET LOW POWER_NEW
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Infineon Availability : 5864
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USD 1.2595

Multiples of: 1

           Cut Tape       
KIRLML6401TRPBF


12V 4.3A 50mΩ@4.5V,4.3A 1.4W 1V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics Availability : 5862
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USD 0.029

Multiples of: 10

                   
HL2312


20V 5.5A 1.2W 25m@4.5V,4.5A 620mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 5860
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USD 0.0177

Multiples of: 20

                   
TM100N04AD


TO-252-3L MOSFETs ROHS
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Tritech-MOS Availability : 5858
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USD 0.1128

Multiples of: 5

                   
IRF7526D1TRPBF


MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC
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Infineon Availability : 5853
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USD 0.2607

Multiples of: 1

2 A30 V200 mOhmsP - Channel    800 mWSmd/SmtMICRO - 8ReelSi1 Channel20 V7.5 nC   
STD4N90K5


MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in a DPAK package
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STMicroelectronics Availability : 5852
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USD 0.8487

Multiples of: 1

3 A900 V1.9 Ohmsn - channel 3 V- 55 C+ 150 C60 Wsmd/smtTO - 252 - 3 si1 channel30 V5.3 nCenhancement  
CS12N06AE-G


MOSFET N Channel 60V 12A 1.9V @ 250uA 13.5mO @ 12A,10V SOP8 RoHS
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Huajing Availability : 5852
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USD 0.1411

Multiples of: 1

                   
Hot RW1A020ZPT2R


MOSFET SW MOSFET MID PWR P-CH 12V .7A
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ROHM Availability : 5852
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USD 0.1639

Multiples of: 1

2 A- 12 V75 mOhmsP - Channel - 1 V- 55 C+ 150 C700 mWSmd/SmtEMT - 6ReelSi1 Channel+/- 10 V6.5 nCEnhancement  
AP2302GN-HF


MOSFET N Trench 20V 3.2A 1.2V @ 250uA 85 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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APEC Availability : 5851
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USD 0.0729

Multiples of: 5

                   
BSC010N04LSIATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon Availability : 5851
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USD 0.888

Multiples of: 1

            Optimos      
30P03D


PDFN-8(3x3) MOSFETs ROHS
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Youtai Availability : 5849
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USD 0.0756

Multiples of: 5

                   
RTQ025P02HZGTR


MOSFET -20V P-CHANNEL -2.5A
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ROHM Availability : 5848
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USD 0.2923

Multiples of: 1

2.5 A20 V100 mOhmsP - Channel 2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 457T - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V6.4 nCEnhancementAEC - Q101 
DMG3415U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated Availability : 5771
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USD 0.0639

Multiples of: 5

4 A20 V42.5 mOhmsP - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V9.1 nCEnhancement  
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