About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Manufacturer
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2028UVT-7


N-Channel 20 V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 5820
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USD 0.0987

Multiples of: 3000

6.2 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V8.3 nCEnhancement  
DMP2066LDM-7


P-Channel 20 V 4.6A (Ta) 1.25W (Ta) Surface Mount SOT-26
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 5820
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USD 0.106

Multiples of: 3000

4.6 A20 V40 mOhmsp - channel  - 55 C+ 150 C1.25 Wsmd/smtSOT - 26 - 6Cut Tapesi1 channel12 V enhancement  
FDC610PZ


MOSFET -30V P-CHANNEL
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ON Semiconductor Availability : 5820
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USD 0.109

Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
2N7000_D75Z


MOSFET N-CHANNEL 60V 200mA
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ON Semiconductor Availability : 5820
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USD 0.1091

Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3 K in KED LEADAmmo PackSi1 Channel20 V Enhancement  
SI1021R-T1-GE3


MOSFET 60V 190mA 250mW 700mohm @ 4.5V
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Vishay Availability : 5820
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USD 0.112

Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 75A - 3Reel      Trenchfet
DMN3016LFDE-7


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated Availability : 5820
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USD 0.1156

Multiples of: 3000

10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - 6Reel-1 Channel+/- 20 v , +/- 20 V25.1 nCEnhancement  
SI2301BDS-T1-E3


MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
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Vishay Availability : 5820
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USD 0.1188

Multiples of: 3000

2.2 A- 20 V100 mOhmsP - Channel8 V - 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
DMN3150LW-7


MOSFET 0.35W 28V 1.6A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 5820
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USD 0.123

Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
FDS8949


SOP-8 MOSFETs ROHS
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TECH PUBLIC Availability : 5820
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USD 0.1302

Multiples of: 5

                   
SI8816EDB-T2-E1


Vishay Semiconductors MOSFET 30V 109mOhm10V 2.3A N-Ch
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Vishay Availability : 5820
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USD 0.1327

Multiples of: 3000

2.3 A30 V109 mOhmsN - Channel 0.6 v to 1.4 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi 12 V2.4 nCEnhancement Trenchfet Power Mosfet
SI1302DL-T1-GE3


MOSFET 30V Vds 20V Vgs SC70-3
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Vishay Availability : 5820
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USD 0.1345

Multiples of: 1

           Cut TapeSi     Trenchfet
SSM6J424TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+6-8V ID=-6.0A RDSON=0.0225Ohm @ 4.5V in UF6 package
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Toshiba Availability : 5820
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USD 0.1369

Multiples of: 1

           Cut Tape       
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay Availability : 5820
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USD 0.1375

Multiples of: 3000

3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
FDC637BNZ


Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
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ON Semiconductor Availability : 5820
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USD 0.1382

Multiples of: 3000

            Powertrench®      
DMN3033LDM-7


30V 6.9A 33mO@6.9A,10V 2W null SOT-26 MOSFETs ROHS
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Diodes Incorporated Availability : 5820
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USD 0.1454

Multiples of: 3000

6.9 A30 V25 mOhmsN - Channel 2.1 V- 55 C+ 150 C2 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V13 nCEnhancement  
BSR315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
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Infineon Availability : 5820
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USD 0.1462

Multiples of: 3000

            Sipmos      
DMN61D8LVTQ-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
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Diodes Incorporated Availability : 5820
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USD 0.1466

Multiples of: 3000

630 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C1.09 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel+/- 12 V0.74 nCEnhancementAec - Q101 
DMG1016VQ-7


MOSFET Comp Pair Enh FET 20Vdss 6Vgss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 5820
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USD 0.1546

Multiples of: 3000

         Smd/SmtSOT - 563 - 6Cut TapeSi    Aec - Q101 
SSM3J16FS(TE85L,F)


Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
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Toshiba Availability : 0
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USD 0.1008

Multiples of: 15000

   P Channel               
SI8806DB-T2-E1


MOSFET 12V 3.9A 0.9W 4.3mOhms @ 4.5V
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Vishay Availability : 0
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USD 0.1397

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 1ReelSi     Microfoot Trenchfet
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