About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7942DP-T1-GE3


MOSFET Dual N-Ch 100V 49mohm @ 10V
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Vishay Availability : 5820
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USD 1.6013

Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
FDMC007N08LCDC


MOSFET FET 80V 64A 6.8 mOhm
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ON Semiconductor Availability : 5820
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USD 1.7837

Multiples of: 3000

64 A80 V6.8 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V44 nCEnhancement  
IPB019N06L3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
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Infineon Availability : 5820
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USD 1.7841

Multiples of: 1000

            Optimos 3      
NVMFS5C426NLT1G


MOSFET 40V 1.2 MOHM T6 S08FL SIN
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ON Semiconductor Availability : 5820
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USD 1.9362

Multiples of: 1500

237 A40 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C128 WSmd/SmtSO - 8FL - 8Cut TapeSi1 Channel20 V93 nCEnhancement  
SI7431DP-T1-E3


Vishay Semiconductors MOSFET 200V 3.8A 5.4W 174mohm 10V
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Vishay Availability : 5820
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USD 2.3875

Multiples of: 3000

2.2 A- 200 V174 mOhmsP - Channel20 V - 55 C+ 150 C1.9 WSmd/SmtSO - 8ReelSi   Enhancement Trenchfet
STH310N10F7-2


STMicroelectronics MOSFET N-CH 100V 2.1mOhm 180A STripFET VI
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STMicroelectronics Availability : 5820
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USD 2.825

Multiples of: 1000

180 A100 V2.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C315 WSmd/SmtH2PAK - 2ReelSi1 Channel20 V180 nC  Stripfet
STB13NM60N


Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
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STMicroelectronics Availability : 5820
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USD 2.8373

Multiples of: 1000

            mdmesh      
IAUTN12S5N017ATMA1


MOSFETs N
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Infineon Availability : 5820
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USD 3.399

Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101OptiMOS
NTMFD5C446NLT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor Availability : 5820
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USD 3.6685

Multiples of: 1

145 A40 V2.65 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V54 nCEnhancement  
STH145N8F7-2AG


MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
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STMicroelectronics Availability : 5820
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USD 4.9775

Multiples of: 1000

90 A80 V4 mOhmsn - channel 2.5 V- 55 C+ 175 C200 Wsmd/smtH2PAK - 3 si1 channel+/- 20 V96 nCenhancement  
AUIRF1324WL


International Rectifier MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
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Infineon Availability : 5820
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USD 6.2257

Multiples of: 1

382 A24 V1.3 mOhmsN - Channel  - 55 C 300 WThrough HoleI2PAK - 3TubeSi1 Channel20 V120 nCEnhancementAec - Q101 
IPT65R033G7XTMA1


MOSFET HIGH POWER_NEW
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Infineon Availability : 5820
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USD 14.6038

Multiples of: 1

69 A650 V33 mOhmsN - Channel 3 V- 55 C+ 150 C391 WSmd/SmtHSOF - 8ReelSi1 Channel+/- 30 V110 nCEnhancement Coolmos
TN2540N8-G


Transistor: N-MOSFET; unipolar; 400V; 1A; 1.6W; SOT89
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Microchip Availability : 5819
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USD 1.232

Multiples of: 1

260 mA400 V12 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
FDMA905P


12V 16A 12mΩ@4.5V,6.7A 2.5W 700mV@250uA 590pF@10V P Channel 2.7nF@10V 35nC@4.5V -55℃~+150℃@(Tj) DFN2x2-6L MOSFETs ROHS
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JSMSEMI Availability : 5818
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USD 0.2655

Multiples of: 1

                   
IAUCN08S7N016TATMA1


MOSFETs 80 V, N-Ch, 1.63 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon Availability : 5818
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USD 2.013

Multiples of: 1

262 A80 V1.63 mOhmsN - Channel 3.2 V- 55 C+ 175 C205 WSMD/SMTPG - LHDSO - 10 - 3Reel , Cut TapeSi1 Channel20 V83 nCEnhancement OptiMOS
IPD90N10S406ATMA1


MOSFET MOSFET_75V 120V
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Infineon Availability : 5817
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USD 1.215

Multiples of: 1

           Cut Tape       
SI1026X


SOT-563 MOSFETs ROHS
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TECH PUBLIC Availability : 5816
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USD 0.0514

Multiples of: 5

                   
AP2714SD


1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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Quan Li Availability : 5816
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USD 0.1758

Multiples of: 5

                   
IQE050N08NM5SCATMA1


MOSFET
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Infineon Availability : 5816
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USD 1.7931

Multiples of: 1

16 A80 V5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
TDNM3K50DWX


50V 500mV 2 N-Channel SOT-363 MOSFETs ROHS
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Shenzhen JingYang Availability : 5815
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USD 0.0518

Multiples of: 5

                   
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