About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2025UFDF-7


MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
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Diodes Incorporated Availability : 5777
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USD 0.1089

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6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.6 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel10 V12.3 nCEnhancement  
TM20P06DF


PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS Availability : 5776
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USD 0.1069

Multiples of: 5

                   
AON7810


Transistor: N-MOSFET x2; unipolar; 30V; 5A; 8W; DFN3x3 DUAL
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Alpha & Omega Availability : 5776
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USD 0.171

Multiples of: 5

                   
IPG20N06S415ATMA2


MOSFET MOSFET
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Infineon Availability : 5776
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USD 0.6888

Multiples of: 1

   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101 
LSI1012LT1G


MOSFET N Trench 20V 500mA 900mV @ 250uA 700 mΩ @ 600mA,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan Availability : 5775
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USD 0.0175

Multiples of: 20

                   
PJA3416_R1_00001


MOSFET N Trench 20V 5.8A 1.2V @ 250uA 80 mΩ @ 1.6A,1.8V SOT-23 RoHS
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Panjit Availability : 5775
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USD 0.0933

Multiples of: 1

5.8 A20 V27 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V6.7 nCEnhancement  
BSS139


null 220mA 350mW 2.5@4.5V,200mA 1V@250uA SOT-23 MOSFETs ROHS
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Siliup Availability : 5771
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USD 0.0097

Multiples of: 50

                   
XP152A12C0MR


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 5771
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USD 0.0246

Multiples of: 10

                   
BSS84T116


MOSFET Pch -60V; -0.23A SOT-23 ESD Prot
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ROHM Availability : 5771
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USD 0.0517

Multiples of: 1

           Cut Tape       
AO4406A


SOP-8 MOSFETs ROHS
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JSMSEMI Availability : 5771
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USD 0.0917

Multiples of: 5

                   
SISS178LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay Availability : 5771
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USD 0.3432

Multiples of: 1

45.3 A70 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V18.7 nCEnhancement TrenchFET
SQJ952EP-T1_BE3


MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay Availability : 5771
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USD 0.4603

Multiples of: 1

           Reel , Cut TapeSi      
IRL530NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
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Infineon Availability : 5771
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USD 0.5764

Multiples of: 1

17 A100 V150 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V22.7 nC   
WSF50N10G


TO-252-3 MOSFETs ROHS
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Winsok Availability : 5769
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USD 0.525

Multiples of: 1

                   
DMN2019UTS-13


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K
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Diodes Incorporated Availability : 5768
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USD 0.1419

Multiples of: 1

5.4 A20 V24 mOhmsN - Channel12 V0.95 V- 55 C+ 150 C780 mWSmd/SmtTSSOP - 8ReelSi2 Channel12 V8.8 nCEnhancement  
TPM2030JX


30V 10A DFN2X2-6L MOSFETs ROHS
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Shenzhen JingYang Availability : 5766
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USD 0.1348

Multiples of: 5

                   
BSP297 H6327


Infineon Technologies MOSFET N-Ch 200V 660mA SOT-223-3
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Infineon Availability : 5766
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USD 0.3003

Multiples of: 1

660 mA200 V1 OhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V16.1 nCEnhancement  
PSMQC042N10LS2_R2_00201


MOSFETs 100V 4.2m ohms Excellect low FOM MOSFET for PD3.0 100W solution
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Panjit Availability : 5765
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USD 1.2445

Multiples of: 1

109 A100 V4.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C115 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement  
IPL60R360P6SATMA1


Infineon Technologies MOSFET N-Ch 600V 11.3A ThinPAK 5x6
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Infineon Availability : 5763
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USD 0.6677

Multiples of: 1

11.3 A600 V360 mOhmsN - Channel 4 V- 40 C+ 150 C89.3 WSmd/SmtTH in PAK 5X6ReelSi1 Channel30 V22 nC  Coolmos
SSM3K36MFV,L3APF(T


MOSFET N Trench 20V 500mA 1V @ 1mA 630 mΩ @ 200mA,5V VESM RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 5761
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USD 0.0267

Multiples of: 10

                   
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