About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SK3413


20V 3A 120mΩ@4.5V,3A P Channel SC-59 MOSFETs ROHS
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Shikues Availability : 5725
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USD 0.0401

Multiples of: 10

                   
SP2006KT5


SOT-523 MOSFETs ROHS
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Siliup Availability : 5723
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USD 0.0085

Multiples of: 50

                   
SP2002KT5


SOT-523 MOSFETs ROHS
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Siliup Availability : 5723
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USD 0.0105

Multiples of: 50

                   
AO3401S


30V 4.2A 1.2W 45m@10V,4.2A 9V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Minos Availability : 5723
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USD 0.0134

Multiples of: 20

                   
SP3415LKT2


SOT-23 MOSFETs ROHS
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Siliup Availability : 5723
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USD 0.0185

Multiples of: 20

                   
SP2101BT3


SOT-323 MOSFETs ROHS
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Siliup Availability : 5723
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USD 0.0185

Multiples of: 20

                   
SI8818EDB-T2-E1


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay Availability : 5723
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USD 0.1133

Multiples of: 1

2.2 A30 V128 mOhmsN - Channel 1 V- 55 C+ 150 C900 mWSMD/SMTMICRO - FOOT - 0.8X0.8 - 4Reel , Cut TapeSi1 Channel- 12 V , + 12 V4.6 nCEnhancement TrenchFET
RAQ045P01TCR


ROHM Semiconductor MOSFET
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ROHM Availability : 5723
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USD 0.1716

Multiples of: 1

4.5 A12 V100 mOhmsP - Channel 300 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6ReelSi1 Channel- 8 V40 nCEnhancement  
SI5448DU-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK ChipFET
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Vishay Availability : 5723
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USD 0.2533

Multiples of: 1

25 A40 V6.46 mOhmsN - Channel 1 V- 55 C+ 150 C31 WSmd/SmtPOWERPAK - CHIP - FET - 8Cut TapeSi1 Channel20 v , - 16 V40 nCEnhancement Trenchfet
NTMFS2D1N08XT1G


MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A
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ON Semiconductor Availability : 5723
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USD 1.0252

Multiples of: 1

201 A80 V1.9 mOhmsN - Channel 3.6 V- 55 C+ 175 C164 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
NVMFS5C604NWFT1G


MOSFETs NFET SO8FL 60V 287A 12MO
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ON Semiconductor Availability : 5720
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USD 4.785

Multiples of: 1

288 A60 V1.2 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V80 nCEnhancement  
HL2307


30V 2.6A 90m@10V,2.6A 1W 2.2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 5719
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USD 0.0188

Multiples of: 20

                   
RH6R025BHTB1


MOSFETs RH6R025BH is a power MOSFET with low-on resistance and High power package, suitable for switching.
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ROHM Availability : 5719
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USD 0.9592

Multiples of: 1

25 A150 V73 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
AO4406AL


MOSFET N Trench 30V 13A 2.5V @ 250uA 11.5 mΩ @ 12A,10V SOIC-8_150mil RoHS
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Alpha & Omega Availability : 5716
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USD 0.2514

Multiples of: 1

                   
DMP3105LVT-7


MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K
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Diodes Incorporated Availability : 5714
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USD 0.0869

Multiples of: 1

3.9 A30 V75 mOhmsP - Channel  - 55 C+ 150 C1.15 WSmd/SmtTSOT26 - 6ReelSi1 Channel12 V19.8 nCEnhancement  
2N7002VC


SOT-563 MOSFETs ROHS
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TECH PUBLIC Availability : 5713
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USD 0.0399

Multiples of: 10

                   
FDG6335N


SOT-363 MOSFETs ROHS
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TECH PUBLIC Availability : 5713
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USD 0.0718

Multiples of: 5

                   
FDS4435BZ


30V 9A 2.5W 20mΩ@10V P Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS Availability : 5713
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USD 0.0941

Multiples of: 5

                   
DMP4051LK3-13


MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 5621
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USD 0.1326

Multiples of: 5

10.5 A40 V51 mOhmsP - Channel 1 V- 55 C+ 150 C8.9 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V14 nCEnhancement  
IRFH7440TRPBF


MOSFET N Trench 40V 85A (Tc) 3.9V @ 100uA 2.4 mΩ @ 50A,10V PG-TDSON-8 RoHS
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Infineon Availability : 4489
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USD 0.2313

Multiples of: 1

159 A40 V2.7 mOhmsN - Channel 3.9 V- 55 C+ 150 C104 WSmd/SmtPQFN - 8ReelSi1 Channel20 V92 nCEnhancement Strongirfet
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