About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD30N03S4L-09


Infineon Technologies MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
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Infineon Availability : 5319
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USD 0.4848

Multiples of: 1

30 A30 V9 mOhmsN - Channel16 V - 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V EnhancementAec - Q101Optimos
BXT1700P06M


Transistor: P-MOSFET
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Bridgelux Availability : 5316
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USD 0.1008

Multiples of: 1

                   
FDN338P


MOSFET P Trench 20V 1.6A 1.5V @ 250uA 115 mΩ @ 1.6A,4.5V SOT-23 RoHS
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Youtai Availability : 5315
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USD 0.0286

Multiples of: 10

                   
WSP8205A


20V 5.5A null TSSOP-8 MOSFETs ROHS
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Winsok Availability : 5315
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USD 0.0611

Multiples of: 5

                   
WNM4009-3/TR


SOT-23 MOSFETs ROHS
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Will Semiconductor Availability : 5310
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USD 0.0845

Multiples of: 5

                   
RQ6E035TNTR


N-Channel 30 V 3.5A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
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ROHM Availability : 5310
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USD 0.2079

Multiples of: 1

3.5 A30 V54 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel12 V4.6 nCEnhancement  
JY3415EX


20V 4A 1V SOT-23 MOSFETs ROHS
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Shenzhen JingYang Availability : 5307
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USD 0.0353

Multiples of: 10

                   
ISZ106N12LM6ATMA1


MOSFETs N
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Infineon Availability : 5302
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USD 0.9258

Multiples of: 1

62 A120 V10.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.4 nCEnhancement OptiMOS
FDPF190N15A


Fairchild Semiconductor MOSFET 150V NCHAN PwrTrench
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ON Semiconductor Availability : 5302
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USD 1.485

Multiples of: 1

27.4 A150 V14.7 mOhmsN - Channel  - 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi     Powertrench
IRLML6401


MOSFET P Trench 12V 4.3A 950mV @ 250uA 50 mΩ @ 4.3A,4.5V SOT-23 RoHS
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Youtai Availability : 5296
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USD 0.0244

Multiples of: 10

                   
IRFR5505TRPBF


MOSFET P Trench 55V 18A 4V @ 250uA 110 mΩ @ 9.6A,10V TO-252-2 (DPAK) RoHS
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Infineon Availability : 5289
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USD 0.2163

Multiples of: 1

18 A55 V110 mOhmsP - Channel 4 V- 55 C+ 150 C57 WSmd/SmtDPAKReelSi1 Channel20 V32 nCEnhancement  
BSS138


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 5286
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USD 0.0111

Multiples of: 50

                   
PSMN1R5-30BLEJ


MOSFET N-channel 30 V 1.5 mo FET
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Nexperia Availability : 5286
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USD 2.772

Multiples of: 1

120 A30 V1.3 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C401 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V228 nCEnhancement  
STP80NF12


Transistor: N-MOSFET; unipolar; 120V; 60A; 300W; TO220-3
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STMicroelectronics Availability : 5284
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USD 1.1399

Multiples of: 1

                   
RTR030P02HZGTL


MOSFET PCH -20V -3A SMALL SIGNAL MOSF
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ROHM Availability : 5280
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USD 0.3188

Multiples of: 1

3 A20 V75 mOhmsP - Channel - 2 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V9.3 nCEnhancementAec - Q101 
BSC0302LSATMA1


120V 8mO@50A,10V 156W null TDSON-8 MOSFETs ROHS
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Infineon Availability : 5278
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USD 0.9909

Multiples of: 1

99 A120 V8 mOhmsN - Channel 2.4 V- 55 C+ 150 C156 WSMD/SMTTDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V79 nCEnhancement  
DMP1245UFCL-7


P-Channel 12 V 6.6A (Ta) 613mW (Ta) Surface Mount X1-DFN1616-6 (Type E)
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Diodes Incorporated Availability : 5276
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USD 0.2156

Multiples of: 1

6.6 A12 V25 mOhmsP - Channel  - 55 C+ 150 C613 mWSmd/SmtX1 - DFN1616 - 6ReelSi1 Channel8 V Enhancement  
DMTH10H025LK3Q-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated Availability : 5271
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USD 0.4389

Multiples of: 1

51.7 A100 V22 mOhmsN - Channel 1 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21 nCEnhancementAec - Q101 
BUK7227-100B,118


N-Channel 100 V 48A (Tc) 167W (Tc) Surface Mount DPAK
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Nexperia Availability : 5270
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USD 1.0921

Multiples of: 1

48 A100 V27 mOhmsN - Channel  - 55 C+ 185 C167 WSmd/SmtSOT - 428ReelSi1 Channel20 V Enhancement  
IRFP4668PBF


MOSFET N Trench 200V 130A 5V @ 250uA 9.7 mΩ @ 81A,10V TO-247 (AC) RoHS
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Infineon Availability : 2326
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USD 1.2956

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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