About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTZD3154NT1G


MOSFET 20V 540mA Dual N-Channel w/ESD
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ON Semiconductor Availability : 9176
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USD 0.0283

Multiples of: 10

570 mA20 V550 mOhms , 550 mOhmsN - Channel 450 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel4.5 V1.5 nC , 1.5 nCEnhancement  
HSBA4113


40V 27A 40mΩ@10V,18A 42W P Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO Availability : 5233
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USD 0.1264

Multiples of: 5

                   
WST4040


MOSFET N Trench 40V 5.8A (Tc) 1.6V @ 250uA 50 mΩ @ 3A,10V SOT-23-3L RoHS
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Winsok Availability : 5232
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USD 0.0938

Multiples of: 5

                   
MCH6353-TL-W


MOSFET Pwr MOSFET 12V 6A 35mOhm SGL P-CH
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ON Semiconductor Availability : 5230
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USD 0.1551

Multiples of: 1

- 6 A- 12 V35 mOhmsP - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi1 Channel     
RQ5L020SNTL


MOSFET NCH 60V 2A SMALL SIGNAL
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ROHM Availability : 5230
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USD 0.1828

Multiples of: 1

2 A60 V170 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V2.7 nCEnhancement  
06N06L


MOSFET N Trench 60V 5.5A 2.5V @ 250uA 60 mΩ @ 3A,10V SOT-23-3L RoHS
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GOFORD Availability : 5227
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USD 0.0496

Multiples of: 5

                   
RRL035P03TR


ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 3.5A
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ROHM Availability : 5222
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USD 0.1375

Multiples of: 1

- 3.5 A- 30 V50 mOhmsP - Channel     Smd/SmtTUMT - 6ReelSi      
2N7002-HF


N-Channel 60 V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
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Comchip Availability : 5220
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USD 0.042

Multiples of: 1

250 mA60 V N - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel60 V600 pCEnhancement  
20N06


TO-252 MOSFETs ROHS
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Youtai Availability : 5215
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USD 0.089

Multiples of: 5

                   
APM2305AC


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 5214
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USD 0.0438

Multiples of: 5

                   
SSM6K404TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=3.0A RDSON=0.055Ohm @ 4V in UF6 package
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Toshiba Availability : 5212
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USD 0.1176

Multiples of: 1

3 A20 V55 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V5.9 nCEnhancement U - Mosiii
FDS6690AS


MOSFET 30V NCH POWER TRENCH SYNCFET
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ON Semiconductor Availability : 5209
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USD 0.4593

Multiples of: 1

10 A30 V10 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench syncfet
LBSS139LT1G


50V 0.2A 225mW 3.5O@5V,200mA N Channel SOT-23 MOSFETs ROHS
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Leshan Availability : 5205
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USD 0.0134

Multiples of: 20

                   
SIRA12DDP-T1-GE3


MOSFETs 30V Vds +20, -16V Vgs PowerPAK SO-8
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Vishay Availability : 5200
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USD 0.1928

Multiples of: 1

81 A30 V3.6 mOhmsN - Channel 2.4 V- 55 C+ 150 C38 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V22 nCEnhancement  
SI2302DS-T1-GE3-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 5199
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USD 0.0097

Multiples of: 20

                   
IPB038N12N3 G


MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
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Infineon Availability : 5195
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USD 2.167

Multiples of: 1

120 A120 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V211 nCEnhancement Optimos
AON7934


Transistor: N-MOSFET x2; unipolar; 30/30V; 12/14A; 9/10W; DFN8
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Alpha & Omega Availability : 5165
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USD 0.121

Multiples of: 5

                   
BSC070N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
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Infineon Availability : 4710
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USD 0.6336

Multiples of: 1

            Optimos 3      
EM6K34T2CR


ROHM Semiconductor MOSFET
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ROHM Availability : 4384
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USD 0.0612

Multiples of: 5

200 mA50 V2.2 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V Enhancement  
RU1C001UNTCL


ROHM Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 2289
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USD 0.0161

Multiples of: 20

100 mA20 V2.5 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel8 V Enhancement  
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