About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3L080SNFRATL


MOSFET Nch 60V Vdss 8A ID TO-252(DPAK); TO-252
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ROHM Availability : 5132
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USD 0.585

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8 A60 V80 mOhmsN - Channel 1 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V9.4 nCEnhancement  
IRF8734TRPBF


MOSFET N Trench 30V 21A 2.35V @ 50uA 3.5 mΩ @ 21A,10V SOIC-8_150mil RoHS
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Infineon Availability : 5130
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USD 0.3432

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            Hexfet®      
DMN3070SSN-7


MOSFET 30V N-CH MOSFET
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Diodes Incorporated Availability : 5129
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USD 0.1034

Multiples of: 1

4.2 A30 V24 mOhmsN - Channel 1.1 V- 55 C+ 150 C780 mWSmd/SmtSC - 59 - 3Cut TapeSi1 Channel20 V13.2 nCEnhancement  
RS1E260ATTB1


MOSFET PCH -30V -80A POWER
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ROHM Availability : 5128
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USD 1.672

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           Cut Tape       
RTM002P02T2L


MOSFET P-CH 20V 200MA
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ROHM Availability : 5126
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USD 0.0462

Multiples of: 5

200 mA20 V2 OhmsP - Channel    150 mWSmd/SmtVMT - 3ReelSi1 Channel12 V Enhancement  
IAUC70N08S5N074ATMA1


MOSFET MOSFET_75V 120V
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Infineon Availability : 5118
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USD 0.6654

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           Cut Tape       
BSO150N03MDGXUMA1


Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
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Infineon Availability : 5117
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USD 0.3663

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            Optimos 3      
GS66504B-MR


MOSFET 650V 15A GaN E-mode GaNPX package Bottom-side cooled
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Gan Systems Availability : 5115
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USD 10.076

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           Cut Tape       
TPM0730N5X


30V 70A 2.5V 1PCSPChannel PDFN-8(5x5.8) MOSFETs ROHS
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Shenzhen JingYang Availability : 5114
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USD 0.3686

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ISZ75DP15LMATMA1


MOSFETs N
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Infineon Availability : 5114
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USD 0.3873

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5.1 A150 V750 mOhmsP - Channel 2 V- 55 C+ 175 C50 WSMD/SMTTSDSON - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V22.9 nCEnhancement  
STU2LN60K3


MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3
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STMicroelectronics Availability : 5114
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USD 0.4422

Multiples of: 1

2 A600 V4 Ohmsn - channel 3.75 V- 55 C+ 150 C45 Wthrough holeIPAK - 3Tubesi1 channel30 V12 nCenhancement supermesh
FDMC86320


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 5114
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USD 0.8602

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22 A80 V11.7 mOhmsN - Channel   + 150 C40 WSmd/SmtPOWER - 33ReelSi1 Channel 24 nC , 29 nC   
2SJ305TE85LF


Toshiba MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
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Toshiba Availability : 5113
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USD 0.3013

Multiples of: 1

- 200 mA- 30 V2.4 OhmsP - Channel20 V- 1.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 2.5 V Enhancement  
DMTH4011SPD-13


MOSFET MOSFET BVDSS 31V 40V
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Diodes Incorporated Availability : 5112
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USD 0.3135

Multiples of: 1

42 A40 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi2 Channel20 V10.6 nCEnhancement  
DMP3045LVT-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated Availability : 5111
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USD 0.1254

Multiples of: 1

5.4 A30 V42 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.2 WSMD/SMT  Si1 Channel- 20 V , + 20 V7 nCEnhancement  
EMH2408-TL-H


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor Availability : 5111
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USD 0.1919

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4 A20 V45 mOhmsn - channel     smd/smtEMH8 - 8Reelsi2 channel     
SIJ494DP-T1-GE3


SIJ494DP-T1-GE3**MULT1^9172^3106951
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Vishay Availability : 5109
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USD 0.8408

Multiples of: 1

36.8 A150 V19.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V31 nCEnhancement Thunderfet, Powerpak
ZXMS6004FF-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated Availability : 5105
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USD 0.3146

Multiples of: 1

1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
SSM3K35AMFV,L3F


MOSFET LowON Res MOSFET ID=.25A VDSS=20V
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Toshiba Availability : 5102
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USD 0.0196

Multiples of: 5

250 mA20 V750 mOhmsN - Channel 350 mV-+ 150 C500 mWSmd/SmtVESM - 3Cut TapeSi1 Channel10 V340 pCEnhancement  
AO4812


30V 6.2A 1.78W 22mO@10V,5A 2 N-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec Availability : 5100
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USD 0.2025

Multiples of: 1

                   
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