LOT No. RANK LOT No. Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 3SK263 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Voltage V V =0V, V =0V, I =100mA 15 V DS G1S G2S D Gate1-to-Source Cutoff Voltage V (off) V =6V, V =4V, I =100mA 0 0.7 1.3 V G1S DS G2S D Gate2-to-Source Cutoff Voltage V (off) V =6V, V =3V, I =100mA 0.1 0.9 1.6 V G2S DS G1S D Gate1-to-Source Leakage Current I V =6V, V =V =0V 50 nA G1SS G1S G2S DS Gate2-to-Source Leakage Current I V =6V, V =V =0V 50 nA G2SS G2S G1S DS Zero-Gate Voltage Drain Current I V =6V, V =1.5V, V =4V *5 *12 mA DSX DS G1S G2S Forward Transfer Admittance yfs V =6V, I =10mA, V =4V, f=1kHz 14 mS DS D G2S Input Capacitance Ciss 2.7 pF V =6V, f=1MHz, V =0V, V =4V DS G1S G2S Reverse Transfer Capacitance Crss 0.015 0.03 pF Power Gain PG V =6V, I =10mA, V =4V, f=200MHz 18 21 dB DS D G2S Noise Figure NF V =6V, I =10mA, V =4V, f=200MHz 1.1 2.2 dB DS D G2S * : The 3SK263 is classified by I as follows : (unit : mA) DSX Rank 5 I 5.0 to 12.0 DSX Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PG, NF Specified Test Circuit f=200MHz ~20pF 3 1 2 T 2 T 1000pF 4 2 OUT IN 50 50 ~20pF ~20pF 47pF 1 1 T 2 12 1000pF V 1000pF G1S 15k V V G2S DS L : 1mm enamel wire 10mm Ordering Information Device Package Shipping memo 3SK263-5-TG-E CP4 3,000pcs./reel Pb-Free No.4423-2/4