Product Information

NJL5310R-TE1

NJL5310R-TE1 electronic component of Nisshinbo

Datasheet
NJR Optical Switches, Specialized COBP Photo Sensor 2 Green LED 525nm

Manufacturer: Nisshinbo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.9576 ea
Line Total: USD 4.9576

536 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
420 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

NJL5310R-TE1
Nisshinbo

1 : USD 3.5535
10 : USD 2.9095
100 : USD 2.0125
500 : USD 1.8055
1000 : USD 1.6215
3000 : USD 1.5985
6000 : USD 1.4835
9000 : USD 1.4835
24000 : USD 1.472

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Method
Mounting Style
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Output Type
Wavelength
Brand
Fall Time
If - Forward Current
Ir - Reverse Current
Pd - Power Dissipation
Rise Time
Vf - Forward Voltage
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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NJL5310R COBP PHOTO SENSOR with Two Green LED GENERAL DISCRIPTION NJL5310R is the compact surface mount type photo sensor, which is built in Two GREEN LED and a high sensitive photo diode. This product is suit for the application for Bio monitor as pulse rate. FEATURES Peak wavelength: 525nm High output, High S/N Miniature, thin package: 3.15x4.35x0.8mm Pb free solder reflowing permitted: 260C, 2times Halogen free, Pb free Compliant with RoHS directive APPLICATION Bio monitor as pulse rate ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATINGS UNIT Emitter *1 Forward Current (Continuous) IF 15 mA Reverse Voltage (Continuous) VR 5 V Power Dissipation PD 65 mW Detector Reverse Voltage VR 35 V Power Dissipation PD 20 mW Coupled Total Power Dissipation Ptot 85 mW Operating Temperature Topr -20 to +70 C Storage Temperature Tstg -30 to +85 C Reflow Soldering Temperature Tsol 260 C *1 This is current value of each 1pcs LED. 22 Nov 2018 - 1 - NJL5310R ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Emitter DC Forward Voltage VF IF=10mA 3 3.5 V *1 Pulse Forward Voltage VFP IFP=100mA 4 V Reverse Current IR VR=5V 10 A Peak Wavelength IF=10mA 525 nm P Detector Dark Current ID VR=10V, Without incident light 0.1 2 nA Forward Voltage VF IF=1mA, Without incident light 1.2 V Terminal Capacitance Ct VR=0V, f=1MHz pF 30 VR=2.5V, f=1MHz pF 13 Peak Wavelength VR=0V nm 800 P Coupled *2 *4 *5 Output Current IO IF=4mA ,VR=2.5V,d=2.0mm 7 20 A *3 *4 Operating Dark Current ILD IF=4mA ,VR=2.5V, 200 nA 30 Without reflective plate Response Time(Rise/Fall) tr VR=0V,RL=1k ns 400 VR=2.5V,RL=1k ns 250 tf ns VR=0V,RL=1k 400 ns VR=2.5V,RL=1k 250 *1 Pulse duty 0.5% (Pulse width 100s, Period 20ms) *2 Please refer to Output Current Test Condition. *3 ILD may increase according to the periphery situation of the surface mounted condition. *4 Total current of each LED (IF=2mA/pcs). *5 Distance from the package undersurface to the aluminum evaporation surface. Note: In the Electro-Optical characteristics table, items that are showed only the typical value are not tested in manufacturing process. 22 Nov 2018 - 2 -

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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