Product Information

CJBA7002K

CJBA7002K electronic component of CJ

Datasheet
MOSFET N Channel 60V 410mA 2.3V @ 250uA 1.5O @ 40mA,10V DFN1006-3L RoHS

Manufacturer: CJ
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0629 ea
Line Total: USD 0.629

14336 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
48 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10
10 : USD 0.057
100 : USD 0.0467
300 : USD 0.0416
1000 : USD 0.0377
5000 : USD 0.0346
10000 : USD 0.0331

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TThe CJBA7002K MOSFET is a N-channel enhancement-mode power field-effect transistor manufactured by CJT. It has a maximum drain-source voltage of 60V, a gate-source voltage of 2.3V, and a drain current of up to 410mA. It also has a drain-source on-state resistance of 1.5ohm when the drain current is 40mA. Additionally, the package of the device is a DFN1006-3L RoHS, which is a 10V-rated plastic dual-flat no-lead package. This N-channel power MOSFET is widely used in power management, load switch, amplifier, industrial, telecommunication, automotive, and consumer electronics applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology

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