SMD Schottky Barrier Rectifiers CDBC3150-HF Thru. CDBC3200-HF Reverse Voltage: 150 to 200 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features -Low Profile surface mount applications DO-214AB (SMC) in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. 0.126 (3.20) 0.245 (6.22) 0.114 (2.90) 0.220 (5.59) -Guard ring for overvoltage protection. -Ultra high-speed switching. 0.280 (7.11) -Silicon epitaxial planar chip,metal silicon junction. 0.260 (6.60) Mechanical data 0.019 (0.485) MAX. -Epoxy: UL94-V0 rate flame retardant. 0.114 (2.90) -Case: Molded plastic, DO-214AB / SMC 0.075 (1.90) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.063 (1.60) 0.004(0.10) -Polarity: Indicated by cathode band. 0.030 (0.76) 0.325 (8.25) -Weight: 0.226 grams(Approx.) 0.305 (7.75) Circuit Diagram Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at Ta=25C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . CDBC CDBC Parameter Symbol Unit 3150-HF 3200-HF Max. repetitive peak reverse voltage VRRM 150 200 V Max. DC blocking voltage VDC 150 200 V Max. RMS voltage VRMS 105 140 V Max. instantaneous forward voltage VF 0.87 0.90 V 3.0A, TA=25C Operating Temperature TJ -50 to +175 C Symbol Parameter Conditions MIN. TYP. MAX. Units Forward rectified current see Fig.1 IO 3.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 70 A on rate load (JEDEC method) VR =VRRM TA=25C IR 0.5 mA Reverse Current VR =VRRM TA=100C IR 20 mA 55 Thermal Resistance Junction to ambient RJA C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 250 pF Storage temperature TSTG -50 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-JB037 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBC3150-HF thru. CDBC3200-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 100 3.0 10 2.5 3.0 2.0 1.0 1.5 1.0 0.1 0.5 TJ=25C Pulse Width 300us 1% Duty Cycle 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 150 175 Forward Voltage, ( V ) Ambient Temperature, (C) Fig.3 - Maximum Non-repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 100 700 O TJ=25 C 8.3ms single half sine wave, JEDEC method 600 80 500 60 400 300 40 200 20 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, ( V ) Fig.5 - Typical Reverse Characteristics 100 10 1 TJ=125C 0.1 TJ=25C 0.01 0 40 80 120 160 200 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-JB037 Page 2 Comchip Technology CO., LTD. Reverse Leakage Current, ( mA ) Average Forward Current, (A) Peak Forward Surge Current, ( A ) Junction Capacitance, (pF) Instantaneous Forward Current, ( A )