SMD Schottky Barrier Diode CDBQR0230L-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041(1.05) -Low forward voltage. 0.037(0.95) -Designed for mounting on small surface. 0.026(0.65) -Extremely thin / leadless package. 0.022(0.55) -Majority carrier conduction. 0.022(0.55) Mechanical data 0.018(0.45) -Case: 0402/SOD-923F standard package, 0.014(0.35) molded plastic. 0.010(0.25) -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BA 0.020(0.50) 0.016(0.40) -Mounting position: Any. Dimensions in inches and (millimeter) -Weight: 0.001 grams(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) Maximum Rating (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Typ Parameter Conditions Symbol Min Max Unit Repetitive peak reverse voltage VRRM 35 V Repetitive peak reverse voltage VRRM 35 V Reverse voltage VR 30 V Reverse voltage VR 30 V Average forward current IO 200 mA Average forward current IO 200 mA 8.3ms single half sine-wave superimposed Forward current,surge peak IFSM 1 A 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Forward current, surge peak IFSM 1 A on rate load (JEDEC method) * 1cycle Power Dissipation PD 125 mW Power dissipation PD 125 mW O Storage temperature TSTG -40 +125 C Junction temperature range TJ -40 +125 C O Junction temperature Tj -40 +125 C Storage temperature range TSTG -40 +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Symbol Typ Parameter Conditions Min Max Unit Forward voltage IF = 200mA VF 0.5 V Forward voltage IF = 200 mA VF 0.5 V Reverse current VR = 10V IR 30 uA Reverse current VR = 10 V IR 30 uA Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G1096 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR0230L-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 1m O 75 C 100u 100 10u O 25 C 10 1u 1 100n O -25 C 0 10n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 100 f = 1 MHz 100 Ta = 25 C 80 60 10 40 20 0 1 0 5 10 15 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map Fig. 6 - IR Dispersion map Fig. 7 - CT Dispersion map 450 50 30 O O O Ta=25 C Ta=25 C 45 Ta=25 C 29 F=1MHz IF=200mA VR=10V n=30pcs VR=0V n=30pcs n=10pcs 440 40 28 35 27 430 30 26 25 25 420 20 24 15 23 AVG:421.28mV AVG:4.1816uA AVG:22.8pF 410 10 22 5 21 400 0 20 Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G1096 Page 2 Comchip Technology CO., LTD. O 125 C O 75 C O 25 C O -25 C Forward voltage (mV) Capacitance between terminals (PF) Forward current (mA ) Reverse current (uA) Average forward current(%) Reverse current ( A ) Capacitance between terminals(pF)