Product Information

ZVN2110A

ZVN2110A electronic component of Diodes Incorporated

Datasheet
MOSFET N-Chnl 100V
Low-leakage dual N-channel enhancement mode mosfet for low-side switching applications.
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.69 ea
Line Total: USD 0.69

14126 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
174 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

ZVN2110A
Diodes Incorporated

1 : USD 0.409
10 : USD 0.3555
100 : USD 0.3173
500 : USD 0.3109
1000 : USD 0.3109
2000 : USD 0.3109

798 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 111
Multiples : 1

Stock Image

ZVN2110A
Diodes Incorporated

111 : USD 0.2925
150 : USD 0.2925
400 : USD 0.2925
1500 : USD 0.2925
4000 : USD 0.2925

705 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

ZVN2110A
Diodes Incorporated

1 : USD 1.0465
10 : USD 0.9113
100 : USD 0.6539
500 : USD 0.5954
1000 : USD 0.5369

14126 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

ZVN2110A
Diodes Incorporated

1 : USD 0.69
10 : USD 0.6118
100 : USD 0.4266
500 : USD 0.3668
1000 : USD 0.3209
2000 : USD 0.2955
4000 : USD 0.2829
8000 : USD 0.2829
24000 : USD 0.2737

174 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 24
Multiples : 1

Stock Image

ZVN2110A
Diodes Incorporated

24 : USD 0.3411
100 : USD 0.3173
500 : USD 0.3109

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

The ZVN2110A is a dual N-channel, enhancement-mode MOSFET from Diodes Incorporated. It is designed for cost-sensitive applications such as basic power detection and signal switching. This device is housed in a SOT-223 package and is rated for a drain-source voltage of 30V, a drain current of 2A, and a maximum gate voltage of ±20V. It features low on-resistance, good gate charge characteristics, and fast switching speeds.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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