SOT89 PNP SILICON PLANAR BCX69 MEDIUM POWER TRANSISTOR ISSUE 2 FEBRUARY 1995 FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE BCX68 PARTMARKING DETAIL BCX69 CJ E BCX69-16 CG C BCX69-25 CH B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -65 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -25 V IC =-100A (BR)CBO Breakdown voltage Collector-Emitter V -20 V IC =-10mA (BR)CEO Breakdown Voltage Emitter-Base V -5 V I =-100A (BR)EBO E Breakdown Voltage Collector Cut-Off I -0.1 A V =-25V CBO CB Current -10 A V =-25V, T =150C CB amb Emitter Cut-Off Current I -10 A V =-5V EBO EB Collector-Emitter V -0.5 V I =-1A, I =-100mA CE(sat) C B Saturation Voltage Base-Emitter Turn-On V -1.0 V I =-1A, V =-1V BE(on) C CE Voltage Static Forward Current h 50 I =-5mA, V =-1V FE C CE Transfer Ratio 85 375 I =-500mA, V =-1V C CE 60 I =-1A, V =-1V* C CE 250 BCX69-16 100 I =-500mA, V =-1V* C CE BCX69-25 160 250 400 I =-500mA, V =-1V C CE Transition Frequency f 100 MHz I =-100mA, V =-5V, T C CE f=100MHz Output Capacitance C 25 pF V =-10V, f=1MHz obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT549 datasheet. 3 - 37