X-On Electronics has gained recognition as a prominent supplier of FZT949TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT949TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT949TA Diodes Incorporated

FZT949TA electronic component of Diodes Incorporated
FZT949TA Diodes Incorporated
FZT949TA Bipolar Transistors - BJT
FZT949TA  Semiconductors

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See Product Specifications
Part No. FZT949TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 5.5 A 100MHz 3 W Surface Mount SOT-223-3
Datasheet: FZT949TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.5021 ea
Line Total: USD 502.1 
Availability - 25220
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
2250
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 1.9625
10 : USD 1.0752
100 : USD 0.7249
500 : USD 0.572
1000 : USD 0.5005
2000 : USD 0.4719

25220
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.5021
2000 : USD 0.388

405
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 2.03
10 : USD 1.1914
28 : USD 0.6972
76 : USD 0.6594
1000 : USD 0.6342

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT949TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT949TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FZT949 Green 30V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > -30V Case: SOT223 CEO I = -5.5A High Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound. I = -20A Peak Pulse Current C UL Flammability Rating 94V-0 Low Saturation Voltage V < -140mV -1A CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020 h Specified up to -20A for a High Gain Hold-Up FE Terminals: Finish - Matte Tin Plated Leads Solderable per MIL- Lead-Free Finish RoHS Compliant (Notes 1 & 2) STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) C SOT223 B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FZT949TA AEC-Q101 FZT949 7 12 1,000 FZT949QTA Automotive FZT949 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See FZT949 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage -30 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -5.5 A I C Peak Pulse Current I -20 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 6) Power Dissipation 24 W Linear Derating Factor P D mW/C 1.6 (Note 7) 12.8 (Note 6) 42 R JA Thermal Resistance, Junction to Ambient (Note 7) R 78 JA C/W Thermal Resistance Junction to Lead (Note 8) 8.8 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except mounted on 25mm x 25mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT949 2 of 7 April 2017 Diodes Incorporated Datasheet Number: DS38008 Rev. 2 - 2 www.diodes.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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