UMC4N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT353 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Surface Mount Package Suited for Automated Assembly Moisture Sensitivity: Level 1 per J-STD-020 Simplifies Circuit Design and Reduces Board Space Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- 202, Method 208 e3 Halogen and Antimony Free.Gree Device (Note 3) Weight: 0.006 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (UMC4NQ) SOT353 (3) (2) (1) Q 3 2 1 1 R1 R2 R = 47k 1 R = 47k 2 Q R2 1 Q 2 Q 2 R = 10k 1 R1 R = 47k 2 4 5 (4) (5) Top View Bottom View Package Pin Out Device Schematic Configuration Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4N-7 AEC-Q101 NP1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See UMC4N Absolute Maximum Ratings, Pre-Biased NPN Transistor, Q ( T = +25C unless otherwise specified.) A 1 Characteristic Symbol Value Unit Supply Voltage 50 V V CC Input Voltage -10 to +40 V V IN Output Current 30 mA I O Collector Current 100 mA I C Absolute Maximum Ratings, Pre-Biased PNP Transistor, Q ( T = +25C unless otherwise specified.) 2 A Characteristic Symbol Value Unit Supply Voltage -50 V V CC Input Voltage -40 to +6 V V IN Output Current -100 mA I O Collector Current -100 mA I C Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 150 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 833 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Note: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. Electrical Characteristics, Pre-Biased NPN Transistor, Q ( T = +25C unless otherwise specified.) 1 A Characteristic Symbol Min Typ Max Unit Test Condition (Note 6) 0.5 V V V = 5V, I = 100A I(OFF) CC O Input Voltage (Note 7) 3 V V V = 0.3V, I = 2mA I(ON) O O Output Voltage 0.1 0.3 V V I / I = 10mA/0.5 mA O(ON) O I Input Current 0.18 mA I V = 5V I I Output Current 0.5 I A V = 50V, V = 0V O(OFF) CC I DC Current Gain G 68 V = 5V, I = 5mA I O O Gain-Bandwidth Product (Note 8) f 250 MHz V = 10V, I = -5mA, f = 100MHz T CE E Input Resistance R 32.9 47 61.1 k 1 Resistance Ratio R /R 0.8 1 1.2 2 1 Notes: 6. The device is guaranteed to be in OFF state with V up to 0.5V. I(OFF) 7. The device is guaranteed to be in ON state with V starting from 3V. I(ON) 8. Characteristic of Transistor for reference only. Electrical Characteristics, Pre-Biased PNP Transistor, Q ( T = +25C unless otherwise specified.) A 2 Characteristic Symbol Min Typ Max Unit Test Condition (Note 9) V -0.3 V V = -5V, I = -100A I(OFF) CC O Input Voltage (Note 10) V -1.4 V V = -0.3V, I = -1mA I(ON) O O Output Voltage -0.1 -0.3 V VO(ON) IO/ II = -5mA/-0.25 mA Input Current -0.88 mA I V = -5V I I Output Current -0.5 A I V = -50V, V = 0V O(OFF) CC I DC Current Gain 68 G V = -5V, I = -5mA I O O Gain-Bandwidth Product (Note 11) 250 MHz f V = -10V, I = 5mA, f = 100MHz T CE E Input Resistance 7 10 13 R k 1 Resistance Ratio R /R 3.7 4.7 5.7 2 1 Notes: 9. The device is guaranteed to be in OFF state with V up to -0.3V. I(OFF) 10. The device is guaranteed to be in ON state with V starting from -1.4V. I(ON) 11. Characteristic of Transistor for reference only. 2 of 6 UMC4N February 2017 Diodes Incorporated www.diodes.com Document number: DS31203 Rev. 6 - 2