BSR315P SIPMOS Small-Signal-Transistor Product Summary Features V -60 V DS P-Channel R 0.8 W DS(on),max Enhancement mode I -0.62 A D Logic level Footprint and pinning compatible with SOT-23 / SuperSOT-23 packages Avalanche rated SC-59 Pb-free lead finishing RoHS compliant Qualified according to AEC Q101 Halogen free according to IEC61249-2-21 Type Package Tape and reel information Marking Halogen-free Packing BSR315P PG-SC59 H6327 = 3000 pcs. / reel LB Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit steady state Continuous drain current I T =25C -0.62 A D A T =70C -0.49 A I T =25C -2.48 Pulsed drain current D,pulse A Avalanche energy, single pulse E I =0.62A, R =25W 24 mJ AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 0.5 W tot A T , T -55 ... 150 Operating and storage temperature C j stg 1A (250V to 500V) ESD class JESD22-C101 Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 Rev 1.06 page 1 2015-07-24BSR315P Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, minimal footprint, R - - 250 K/W thJA junction - ambient steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage -60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-160A -1 -1.5 -2 GS(th) DS GS D V =-60V, V =0V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25C j V =-60V, V =0V, DS GS - -10 -100 T =150C j I V =-20V, V =0V Gate-source leakage current - -10 -100 nA GSS GS DS V =-4.5V, GS R Drain-source on-state resistance - 870 1300 mW DS(on) I =-0.49A D V =-10V, GS - 620 800 I =-0.62A D V >2 I R , DS D DS(on)max Transconductance g 0.5 0.9 - S fs I =-0.49A D Rev 1.06 page 2 2015-07-24