IPBE65R115CFD7AATMA1 Infineon

IPBE65R115CFD7AATMA1 electronic component of Infineon
IPBE65R115CFD7AATMA1 Infineon
IPBE65R115CFD7AATMA1 MOSFETs
IPBE65R115CFD7AATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPBE65R115CFD7AATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPBE65R115CFD7AATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPBE65R115CFD7AATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET AUTOMOTIVE
Datasheet: IPBE65R115CFD7AATMA1 Datasheet (PDF)
Price (USD)
1: USD 5.5875 ea
Line Total: USD 5.59 
Availability : 577
  
Ship by Thu. 20 Nov to Mon. 24 Nov
QtyUnit Price
1$ 5.5875
10$ 3.3235
100$ 2.541
500$ 2.486
1000$ 2.178

Availability 577
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.5875
10$ 3.3235
100$ 2.541
500$ 2.486
1000$ 2.178

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPBE65R115CFD7AATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPBE65R115CFD7AATMA1 and other electronic components in the MOSFETs category and beyond.

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IPBE65R115CFD7A MOSFET D-PAK 7pin 650V CoolMOS CFD7A SJ Power Device 650V CoolMOS CFD7A is Infineon s latest generation of market leading tab automotive qualified high voltage CoolMOS MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shift full-bridge and LLC. 1 2 3 4 5 6 7 Features Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Q rr Lowest FOM R *Q and R *E DS(on) g DS(on) oss 100% avalanche tested Drain tab Kelvin source contact available Best-in-class RDS(on) in SMD and THD packages Gate *1 Pin 1 *2 Benefits Driver Source Power Optimized for higher battery voltages up to 475 V thanks to further Pin 2 Source *1: Internal body diode Pin 3-7 *2: Integrated ESD diode improved robustness Lower switching losses enabling higher switching frequencies High quality and reliability Advanced controllability due to kelvin source Increased package creepage distance Increased efficiency in light load and full load conditions Potential applications Suitable for PFC and DC-DC stages for: Unidirectional and bidirectional DC-DC converters, On-Board battery Chargers Product validation Qualified according to AEC Q101 Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. For production part approval process (PPAP) release we propose to share application related information during an early design phase to avoid delays in PPAP release. Please contact Infineon sales office. Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS R 115 m DS(on),max Q 41 nC g,typ ID,pulse 82 A Eoss 400V 5.6 J Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPBE65R115CFD7A PG-TO263-7-11 65A115F7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-04-02650V CoolMOS CFD7A SJ Power Device IPBE65R115CFD7A Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-04-02

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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