IPI075N15N3GXKSA1

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G %& 3 Power-Transistor Product Summary Features V )-( J 9H Q 3 81>>5< > B=1< <5F5< R /&* , > =1H -( Q H3 5<<5>D 71D5 3 81B75 H R B 4E3 D ( & 9 Z I )(( 6 9 Q .5BI < G > B5C9CD1>3 5 R 9 Z Q T 5B1D9>7 D5= 5B1DEB5 Q )2 6B55 <514 <1D9>7 + , 3 = <91>D ) Q * E1<96954 13 3 B49>7 D 6 B D1B75D 1 <93 1D9 > Q 451< 6 B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 8B > EC B53 D9693 1D9 > Q 1< 75> 6B55 13 3 B49>7 D Type ) )) ) Package E=%ID*.+%+ E=%ID**(%+ ) -( Marking (/*C)-C (/-C)-C (/-C)-C Maximum ratings, 1D T T E><5CC D85BG9C5 C 53 96954 V Value Parameter Symbol Conditions Unit >D9>E EC 4B19> 3 EBB5>D I T T )(( 6 9 8 T T 1+ 8 * I T T ,(( )E<C54 4B19> 3 EBB5>D 9 aX Q 8 F1<1>3 85 5>5B7I C9>7<5 E<C5 E I R /0( Y 6H 9 =H I V . 9 9H + 5F5BC5 49 45 4v Pt Pv Pt Pi Pt V C . WJ r T T V YMd V 1D5 C EB3 5 F <D175 q*( J =H P T T ) G5B 49CC9 1D9 > +(( K 8 T T ( 5B1D9>7 1>4 CD B175 D5= 5B1DEB5 T V S 3 <9=1D93 3 1D57 BI ) ,- 1>4 , * ,55 697EB5 + 5F 175 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics -85B=1< B5C9CD1>3 5 :E>3 D9 > 3 1C5 R % % (&- A K T 8 R =9>9=1< 6 D B9>D T 6 -85B=1< B5C9CD1>3 5 :E>3 D9 > MYNUQZ + % % ,( 3 = 3 <9>7 1B51 Electrical characteristics, 1D T T E><5CC D85BG9C5 C 53 96954 V Static characteristics V V . I = B19> C EB3 5 2 B51 4 G> F <D175 )-( % % J7G 9HH =H 9 V V 4V I V 1D5 D8B5C8 <4 F <D175 * + , = T 9H =H 9 V . V . 9H =H 05B 71D5 F <D175 4B19> 3 EBB5>D I % (&) ) r6 9HH T T V V . V . 9H =H % )( )(( T T V I V . V . 1D5 C EB3 5 <51 175 3 EBB5>D % ) )(( Z6 =HH =H 9H V . I =H 9 R B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % .&* /&- 9 Z -( -( V . I =H 9 % -&0 /&*ID*.+ V . I =H 9 % .&, /&/ -( -( V . I =H 9 % .&( /&,ID*.+ R 1D5 B5C9CD1>3 5 % *&+ % = gV g5*gI gR 9H 9 9 Z YMd I MZ O ZPaO MZOQ g .- )+( % H R I 9 + * 5F93 5 > == H == H == 5 HI ) + G9D8 3 = >5 <1I5B V = D893 3 5B 1B51 6 B 4B19> 3 >>53 D9 > ) 9C F5BD93 1< 9> CD9<< 19B + 5F 175