Product Information

IS62WV20488BLL-25MLI

IS62WV20488BLL-25MLI electronic component of ISSI

Datasheet
SRAM Chip Async Single 2.5V/3.3V 16M-bit 2M x 8 25ns 48-Pin Mini-BGA

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

220: USD 20.7901 ea
Line Total: USD 4573.82

0 - Global Stock
MOQ: 220  Multiples: 220
Pack Size: 220
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 220
Multiples : 220
220 : USD 20.7901

     
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RoHS - XON
Icon ROHS
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Supply Voltage - Max
Supply Voltage - Min
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IS62WV20488ALL IS62WV20488BLL 2M x 8 HIGH-SPEED LOW POWER August 2016 CMOS STATIC RAM FEATURES DESCRIPTION High-speed access times: The ISSI IS62WV20488ALL/BLL is a high-speed, 25, 35 ns low power, 2M-word by 8-bit CMOS static RAM. The High-performance, low-power CMOS process IS62WV20488ALL/BLL is fabricated using ISSI s high- performance CMOS technology. This highly reliable pro- Multiple center power and ground pins for greater cess coupled with innovative circuit design techniques, noise immunity yields higher performance and low power consumption Fully static operation: no clock or refresh devices. required When CS1 is HIGH (deselected) or when CS2 is LOW TTL compatible inputs and outputs (deselected), the device assumes a standby mode at Single power supply which the power dissipation can be reduced down with Vdd 1.65V to 2.2V (IS62WV20488ALL) CMOS input levels. speed = 35ns for Vcc = 1.65V to 2.2V The IS62WV20488ALL/BLL operates from a single power supply and all inputs are TTL-compatible. Vdd 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V The IS62WV20488ALL/BLL is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. Packages available: 48-ball miniBGA (9mm x 11mm) 44-pin TSOP (Type II) Industrial Temperature Support Lead-free available FUNCTIONAL BLOCK DIAGRAM 2M X 8 A0-A20 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CS2 CS1 CONTROL CIRCUIT OE WE Copyright 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. A1 08/24/16A2 CS1 I/O1 I/O3 I/O4 I/O5 WE A11 IS62WV20488ALL IS62WV20488BLL PIN CONFIGURATION 48-pin Mini BGA (M ) (9mm x 11mm) 44-pin TSOP (Type II ) 1 2 3 4 5 6 NC 1 44 NC 43 NC NC 2 A0 3 42 A20 A1 4 41 A18 A2 5 40 A17 A3 6 39 A16 A NC OE A0 A1 CS2 A4 7 38 A15 B NC NC A3 A4 I/O0 CS1 8 37 OE I/O0 9 36 I/O7 C NC NC A5 A6 I/O2 I/O1 10 35 I/O6 VDD 11 34 GND GND NC A17 A7 VDD D GND 12 33 VDD VDD NC NC A16 GND E I/O2 13 32 I/O5 I/O3 14 31 I/O4 NC NC A14 A15 I/O6 F 30 WE 15 A14 NC A19 A12 A13 I/O7 G A5 16 29 A13 A6 17 28 A12 A18 A8 A10 A20 A9 H A7 18 27 A11 A8 19 26 A10 A9 20 25 A19 NC 21 24 NC NC 22 23 NC PIN DESCRIPTIONS A0-A20 Address Inputs CS1, CS2 Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Data Input / Output Vdd Power GND Ground NC No Connection 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. A1 08/24/2016

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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