TM HiPerFET IXFN 180N20 V = 200 V DSS Power MOSFETs I = 180 A D25 Single Die MOSFET R = 10 m DS(on) D t < 250 ns N-Channel Enhancement Mode rr Avalanche Rated, High dv/dt, Low t rr Preliminary data S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25 C to 150 C 200 V DSS J S V T = 25 C to 150 C R = 1 M 200 V DGR J GS G V Continuous 20 V GS V Transient 30 V GSM S I T = 25 C, Chip capability 180 A D25 C D I Terminal current limit 100 A L(RMS) I T = 25 C, pulse width limited by T 720 A G = Gate D = Drain DM C JM S = Source I T = 25 C36A AR C Either Source terminal at miniBLOC can be used E T = 25 C64mJ AR C as Main or Kelvin Source E T = 25 C4J AS C dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150 C, R = 2 J G P T = 25 C 700 W D C Features T -55 ... +150 C J International standard packages T 150 C JM miniBLOC, with Aluminium nitride T -55 ... +150 C stg isolation TM V 50/60 Hz, RMS t = 1 min 2500 V~ Low R HDMOS process ISOL DS (on) I 1 mA t = 1 s 3000 V~ Rugged polysilicon gate cell structure ISOL Unclamped Inductive Switching (UIS) M Mounting torque 1.5/13 Nm/lb.in. d rated Terminal connection torque 1.5/13 Nm/lb.in. Low package inductance Fast intrinsic Rectifier Weight 30 g Applications Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J DC-DC converters min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 3 mA 200 V DSS GS D power supplies V V = V , I = 8 mA 2 4 V DC choppers GH(th) DS GS D Temperature and lighting controls I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V T = 25 C 100 A DSS DS DSS J V = 0 V T = 125 C2mA Advantages GS J R V = 10 V, I = 0.5 I 10 m DS(on) GS D D25 Easy to mount Pulse test, t 300 s, Space savings duty cycle d 2 % High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98551B (7/00) 2000 IXYS All rights reserved 1 - 2IXFN 180N20 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25 C, unless otherwise specified) J min. typ. max. g V = 15 V I = 60A, pulse test 90 130 S fs DS D C 22000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 3800 pF oss GS DS C 600 pF rss t 55 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 85 ns M4 screws (4x) supplied r GS DS DSS D D25 Dim. Millimeter Inches t R = 1 (External), 180 ns d(off) G Min. Max. Min. Max. t 56 ns A 31.50 31.88 1.240 1.255 f B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 Q 660 nC g(on) D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 120 nC E 4.09 4.29 0.161 0.169 gs GS DS DSS D D25 F 14.91 15.11 0.587 0.595 Q 270 nC G 30.12 30.30 1.186 1.193 gd H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 R 0.18 K/W thJC K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 R 0.05 K/W thCK M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 180 A S GS I Repetitive 720 A SM pulse width limited by T JM V I = 100A, V = 0 V, 1.2 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t I = 50A, -di/dt = 100 A/ s, V = 100 V T = 25 C 250 ns rr F R J Q T = 25 C 1.5 C RM J I 10 A RM IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025