Thyristors
Surface Mount 400V - 800V > MAC16HCDG, MAC16HCMG, MAC16HCNG
Pb
MAC16HCDG, MAC16HCMG, MAC16HCNG
Description
Designed primarily for full-wave ac control applications,
such as motor controls, heating controls or dimmers; or
wherever fullwave, silicon gatecontrolled devices are
needed.
Features
High Commutating di/dt High Surge Current
and High Immunity to Capability 150 Amperes
dv/dt @ 125C Industry Standard TO220
Package for Ease of
Uniform Gate Trigger
Design
Currents in Three
Quadrants, Q1, Q2, and Glass Passivated
Q3 Junctions for Reliability
and Uniformity
Blocking Voltage to 800
Volts These Devices are
PbFree and are RoHS
OnState Current Rating
Compliant
of 16 Amperes RMS at
80C
Pin Out Functional Diagram
MT 2 MT 1
G
Additional Information
CASE 221A
STYLE 4
1
2
Datasheet Resources Samples
2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/24/19Thyristors
Surface Mount 400V - 800V > MAC16HCDG, MAC16HCMG, MAC16HCNG
Maximum Ratings (T = 25C unless otherwise noted)
J
Rating Symbol Value Unit
MAC16HCD 400
Peak Repetitive OffState Voltage (Note 1) V ,
DRM
MAC16HCM 600 V
( 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) V
RRM
MAC16HCN 800
On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T = 80C) I 16 A
C T (RMS)
Peak Non-Repetitive Surge Current
I 150 A
TSM
(One Full Cycle Sine Wave, 60 Hz, T = 125C)
C
2
Circuit Fusing Consideration (t = 8.3 ms) I t 93 Asec
Peak Gate Power (T = +80C, Pulse Width = 1.0 s) P 20 W
C GM
Average Gate Power (t = 8.3 ms, T = 80C) P 0.5 W
C G(AV)
Operating Junction Temperature Range T -40 to +125 C
J
Storage Temperature Range T -40 to +125 C
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
DRM RRM
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating Symbol Value Unit
JunctiontoCase (AC) R 2.2
JC
Thermal Resistance, C/W
JunctiontoAmbient R 62.5
JA
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for
T 260 C
L
10 seconds
Electrical Characteristics - OFF (T = 25C unless otherwise noted ; Electricals apply in both directions)
J
Characteristic Symbol Min Typ Max Unit
- - 0.01
Peak Repetitive Blocking Current T = 25C I ,
J DRM
mA
(V = V = V ; Gate Open) T = 125C I
D DRM RRM J RRM - - 2.0
Electrical Characteristics - ON (T = 25C unless otherwise noted; Electricals apply in both directions)
J
Characteristic Symbol Min Typ Max Unit
Peak OnState Voltage (Note 2) (I = 21 A Peak) V - 1.6 V
TM TM
MT2(+), G(+) 10 16 50
Gate Trigger Current
(Continuous dc) MT2(+), G() I 10 18 50 mA
GT
(V = 12 V, R = 100 )
D L
MT2(), G() 10 22 50
MT2(+), G(+) 0.5 0.75 1.5
Gate Trigger Voltage
(Continuous dc) MT2(+), G() V 0.5 0.72 1.5 V
GT
(V = 12 V, R = 100 )
D L
MT2(), G() 0.5 0.82 1.5
MT2(+), G(+) 33 60
Latching Current
MT2(+), G() V 36 80 V
GD
(V = 24 V, I = 35 mA)
D G
MT2(), G() 33 50
Holding Current (V = 12 V , Gate Open, Initiating Current = 200 mA)) I 20 50 mA
D dc H
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/24/19