Product Information

BT152-400R/B

BT152-400R/B electronic component of NXP

Datasheet
BT152-400R/B BT152-400R T/HOLE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1563 ea
Line Total: USD 3.1563

46 - Global Stock
Ships to you by
Fri. 29 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46 - Global Stock


Ships to you by Fri. 29 Mar

MOQ : 1
Multiples : 1
1 : USD 3.1563
25 : USD 1.5782
50 : USD 1.4203
75 : USD 1.1836
100 : USD 1.0653

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
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DISCRETE SEMICONDUCTORS BT152 series Thyristors Product specification March 1997 Semiconductors Product specification Thyristors BT152 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 400R 600R 800R bidirectional blocking voltage V , Repetitive peak off-state 450 650 800 V DRM capability and high thermal cycling V voltages RRM performance. Typical applications I Average on-state current 13 13 13 A T(AV) include motor control, industrial and I RMS on-state current 20 20 20 A T(RMS) domestic lighting, heating and static I Non-repetitive peak on-state 200 200 200 A TSM switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab 1 cathode ak 2 anode 3 gate g 123 tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -400R -600R -800R 1 1 V Repetitive peak off-state - 450 650 800 V DRM voltages I Average on-state current half sine wave T 103 C - 13 A T(AV) mb I RMS on-state current all conduction angles - 20 A T(RMS) I Non-repetitive peak half sine wave T = 25 C prior to TSM j on-state current surge t = 10 ms - 200 A t = 8.3 ms - 220 A 2 2 2 ItI t for fusing t = 10 ms - 200 A s dI /dt Repetitive rate of rise of I = 50 A I = 0.2 A - 200 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 5 A GM V Peak gate voltage - 5 V GM V Peak reverse gate voltage - 5 V RGM P Peak gate power - 20 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. March 1997 1 Rev 1.200

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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