BSS123,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Extremely fast switching V = 100 V DSS Logic level compatible Subminiature surface mounting I = 150 mA D package g R 6 (V = 10 V) DS(ON) GS s GENERAL DESCRIPTION PINNING SOT23 N-channel enhancement mode PIN DESCRIPTION field-effect transistor in a plastic envelope using trench 1 gate 3 technology. Top view 2 source Applications:- Relay driver 3 drain High-speed line driver Telephone ringer 1 2 The BSS123 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 150C - 100 V DSS j V Drain-gate voltage T = 25 C to 150C R = 20 k - 100 V DGR j GS V Gate-source voltage - 20 V GS I Continuous drain current T = 25 C - 150 mA D a I Pulsed drain current T = 25 C - 600 mA DM a P Total power dissipation T = 25 C - 0.25 W D a T, T Operating junction and - 55 150 C j stg storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction surface mounted on FR4 board 500 - K/W th j-a to ambient August 2000 1 Rev 1.000