Product Information

BT151X-650C,127

BT151X-650C,127 electronic component of WeEn Semiconductor

Datasheet
SCRs Thyristor SCR 650V 1 10A 3-Pin (3+Tab)

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0811 ea
Line Total: USD 1.08

6085 - Global Stock
Ships to you between
Mon. 29 Apr to Wed. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6069 - Global Stock


Ships to you between Mon. 29 Apr to Wed. 01 May

MOQ : 1
Multiples : 1

Stock Image

BT151X-650C,127
WeEn Semiconductor

1 : USD 0.7578
10 : USD 0.6762
100 : USD 0.4715
500 : USD 0.4048
1000 : USD 0.3542
2000 : USD 0.3277
5000 : USD 0.3128
10000 : USD 0.3128
25000 : USD 0.3025

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
Off State Leakage Current Vdrm Idrm
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
Rohs Mouser
Current Rating
Off-State Leakage Current Vdrm Idrm
Type
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Subcategory
Taric
LoadingGif

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BT151X-650R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F)full pac plastic package intended for use in applications requiring high bidirectional blocking voltage and high current surge capability with high thermal cycling performance. 2. Features and benefits High bidirectional blocking voltage capability High current surge capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average on-state half sine wave T 69 C - - 7.5 A T(AV) h current I RMS on-state current half sine wave T 69 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 120 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 132 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151X-650R SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 436 V T = 125 C R = 100 200 1000 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12 V = 436 V T = 125 C (V = 67% 50 130 - V/s DM j DM of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151X-650R TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT151X-650R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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