PBSS5160T,215

PBSS5160T 60 V, 1 A PNP low V (BISS) transistor CEsat Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a small CEsat SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High efficiency due to less heat generation Reduces Printed-Circuit Board (PCB) area required Cost-effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications Major application segments: Automotive Telecom infrastructure Industrial Power management: DC-to-DC conversion Supply line switching Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 1A C I peak collector current t = 1 ms or limited -- 2A CM by T j(max) 1 R collector-emitter I = 1A - 220 330 m CEsat C saturation resistance I = 100 mA B 1 Pulse test: t 300 s 0.02. pNexperia PBSS5160T 60 V, 1 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 006aab259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5160T - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS5160T *U6 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 80 V CBO V collector-emitter open base - 60 V CEO voltage V emitter-base voltage open collector - 5V EBO 1 I collector current - 0.9 A C 2 - 1A I peak collector current t = 1 ms or limited - 2A CM by T j(max) I base current - 300 mA B I peak base current t 300 s 0.02 - 1A BM p PBSS5160T 4 Product data sheet Rev. 04 15 January 2010 2 of 11 Nexperia B.V. 2017. All rights reserved