PMCM6501VPEZ

PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -8.2 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.0 A T = 25 C - 19 25 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMCM6501VPE 12 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 S source G B B2 S source C C1 D drain S Transparent top view C2 D drain 017aaa259 WLCSP6 (OL- PMCM6501VPE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM6501VPE WLCSP6 WLCSP6: wafer level chip-size package 6 bumps OL-PMCM6501VPE (3 x 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM6501VPE AD 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B C Top view, balls down aaa-013901 Fig. 1. WLCSP6 marking code description PMCM6501VPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 August 2015 2 / 15