Product Information

PMZ350UPEYL

PMZ350UPEYL electronic component of Nexperia

Datasheet
P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount SOT-883

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0677 ea
Line Total: USD 0.3385

23561 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
23561 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 5
Multiples : 5

Stock Image

PMZ350UPEYL
Nexperia

5 : USD 0.0677
50 : USD 0.0529
150 : USD 0.0429
500 : USD 0.0406
2500 : USD 0.0389
5000 : USD 0.0379

10718 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

PMZ350UPEYL
Nexperia

1 : USD 0.3599
10 : USD 0.215
100 : USD 0.0966
1000 : USD 0.0655
2500 : USD 0.0609
10000 : USD 0.0483
20000 : USD 0.0449
50000 : USD 0.0437
100000 : USD 0.0425

9544 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 5
Multiples : 1

Stock Image

PMZ350UPEYL
Nexperia

5 : USD 0.2015
25 : USD 0.0975
100 : USD 0.0884
246 : USD 0.0663
677 : USD 0.0624

9700 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 10000
Multiples : 10000

Stock Image

PMZ350UPEYL
Nexperia

10000 : USD 0.0437
20000 : USD 0.0429

20065 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 175
Multiples : 1

Stock Image

PMZ350UPEYL
Nexperia

175 : USD 0.0524
250 : USD 0.049
500 : USD 0.0456
1000 : USD 0.0423
3000 : USD 0.0414

11640 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1563
Multiples : 1

Stock Image

PMZ350UPEYL
Nexperia

1563 : USD 0.0539
2500 : USD 0.0527

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 1.8 kV HBM Leadless ultra small SMD plastic package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZ350UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ350UPE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ350UPE ZP PMZ350UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 May 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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