Product Information

H11AG1

H11AG1 electronic component of ON Semiconductor

Datasheet
H11AG1 WELWYN - SPECIAL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5921 ea
Line Total: USD 2.5921

237 - Global Stock
Ships to you by
Mon. 01 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
237 - Global Stock


Ships to you by Mon. 01 Apr

MOQ : 1
Multiples : 1

Stock Image

H11AG1
ON Semiconductor

1 : USD 2.5921
25 : USD 1.296
50 : USD 1.1664
75 : USD 0.972
100 : USD 0.8748

     
Manufacturer
Product Category
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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H11AG1M 6-Pin DIP Phototransistor Optocoupler April 2015 H11AG1M 6-Pin DIP Phototransistor Optocoupler Features Description High-Efficiency Low-Degradation Liquid Epitaxial The H11AG1M device consists of a Gallium-Aluminum- IRED Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device Logic Level Compatible, Input and Output Currents, provides the unique feature of high current transfer ratio with CMOS and LS/TTL at both low output voltage and low input current. This High DC Current Transfer Ratio at Low Input Currents makes it ideal for use in low-power logic circuits, tele- (as low as 200 A) communications equipment and portable electronics Safety and Regulatory Approvals: isolation applications. UL1577, 4,170 VAC for 1 Minute RMS DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications CMOS Driven Solid State Reliability Telephone Ring Detector Digital Logic Isolation Schematic Package Outlines 1 6 ANODE BASE 6 6 1 1 CATHODE 2 5 COLLECTOR 6 1 N/C 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AG1M Rev. 1.4H11AG1M 6-Pin DIP Phototransistor Optocoupler Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 V IIV Installation Classications per DIN VDE RMS 0110/1.89 Table 1, For Rated Mains Voltage IIV < 300 V RMS Climatic Classication 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter ValueUnit Input-to-Output Test Voltage, Method A, V x 1.6 = V , IORM PR 1360 V peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m V PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , IORM PR 1594 V peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable Over-Voltage 6000 V IOTM peak External Creepage 7mm External Clearance 7mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm (1) T Case Temperature 175 C S (1) I Input Current 350 mA S,INPUT (1) Output Power 800 mW P S,OUTPUT (1) 9 R Insulation Resistance at T , V = 500 V > 10 IO S IO Note: 1. Safety limit values maximum values allowed in the event of a failure. 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AG1M Rev. 1.4 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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