MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES (No Suffix) 100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (1 Suffix) Electrically Similar to Popular TIP41 and TIP42 Series COMPLEMENTARY Epoxy Meets UL 94 V0 0.125 in COLLECTOR COLLECTOR NJV Prefix for Automotive and Other Applications Requiring 2, 4 2, 4 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 1 These Devices are PbFree and are RoHS Compliant BASE BASE MAXIMUM RATINGS 3 3 EMITTER EMITTER Rating Symbol Max Unit CollectorEmitter Voltage V 100 Vdc CEO 4 CollectorBase Voltage V 100 Vdc CB EmitterBase Voltage V 5 Vdc EB 4 I 6 Adc Collector Current Continuous C 1 2 1 2 Collector Current Peak I 10 Adc CM 3 3 Base Current I 2 Adc B DPAK IPAK CASE 369C CASE 369D Total Power Dissipation P W D STYLE 1 STYLE 1 T = 25C 20 W/C C 0.16 Derate above 25C MARKING DIAGRAMS Total Power Dissipation (Note 1) P W D 1.75 T = 25C A 0.014 W/C Derate above 25C Operating and Storage Junction T , T 65 to +150 C AYWW AYWW J stg Temperature Range J4xCG J4xCG ESD Human Body Model HBM 3B V ESD Machine Model MM C V DPAK IPAK Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year 1. These ratings are applicable when surface mounted on the minimum pad WW = Work Week sizes recommended. J4xC = Device Code x = 1 or 2 G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 13 MJD41C/DMJD41C (NPN), MJD42C (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) 100 (I = 30 mAdc, I = 0) C B Collector Cutoff Current I Adc CEO 50 (V = 60 Vdc, I = 0) CE B I Adc Collector Cutoff Current CES 10 (V = 100 Vdc, V = 0) CE EB I mAdc Emitter Cutoff Current EBO 0.5 (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) h DC Current Gain FE (I = 0.3 Adc, V = 4 Vdc) 30 C CE (I = 3 Adc, V = 4 Vdc) 15 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) 1.5 (I = 6 Adc, I = 600 mAdc) C B BaseEmitter On Voltage V Vdc BE(on) 2 (I = 6 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS f MHz Current Gain Bandwidth Product (Note 4) T 3 (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE test SmallSignal Current Gain h fe 20 (I = 0.5 Adc, V = 10 Vdc, f = 1 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. f = h f . T fe test www.onsemi.com 2